磁性过渡金属二硫族化合物1T-CrX2(X=Se, Te)基态性质调控研究

磁性过渡金属二硫族化合物是典型的准二维层状材料，蕴含有与电子自旋属性相关的丰富物性，其中如1T-CrX2 (X=Se, Te)等材料具有本征磁性的特征。调控本征磁性过渡金属二硫族化合物的基态性质，研究其磁性起源并且探索室温本征磁性半导体材料一直是凝聚态物理和材料科学领域的前沿。本项目以1T-CrX2 (X=Se, Te)为研究对象，通过元素插层的方法来调节层间耦合，系统研究元素插层对其基态性质的影响，并利用强磁场下的量子振荡(SdH和dHvA振荡)、扫描隧道谱（STS）等方法来研究材料的电子结构，结合第一性原理计算研究材料磁性的起源，揭示材料磁性的微观机制，总结元素插层对基态性质的调控规律，为探索合成过渡金属二硫族化合物室温磁性半导体材料提供参考，也为室温自旋电子学器件应用研究奠定材料基础。

Magnetic transition metal dichalcogenides (MTMDs) are typical quasi two-dimensional layered materials and present lots of physical properties related to the spin degree of freedom of electron. For example, 1T-CrX2(X=Se, Te) show the intrinsic magnetic properties. Tuning the ground state properties，investigating the origin of the magnetism of the MTMDs and exploring MTMDs with the magnetic transition temperature near the room temperature and semiconducting behavior are the frontier field in the condensed matter physics and material science. In this project, we do the research on the 1T-CrX2(X=Se, Te) and tuning the interlayer coupling by the element intercalation and study the evolution of the electronic structure by the measurements of the quantum oscillations (SdH and dHvA oscillations) and Scanning Tunneling Spectroscopy (STS). With the help of first principle calculations, the electronic structure evolution of the ground state tuned by the element intercalation and the origin of magnetism in 1T-CrX2(X=Se, Te) will be explored. The study of this project can give some basic information of exploring the MTMDs with the magnetic phase temperature near the room temperature and semiconducting behavior and also can guide the possible applications in the room temperature spintronics based on the MTMDs.