硅基内三维体硅微结构成型机理及其单片集成多轴传感器研究

小型化、高性能、低成本和批量化制造是制约我国多轴传感器产业化发展的关键因素，而创新且与IC工艺兼容的硅基内三维体硅微结构制造技术是解决该问题的有效途径。为此，开展以单片集成多轴传感器为应用对象的硅基内三维体硅微结构成型机理研究。首先，建立硅基内微尺度限域空间内的流体动力学模型，分析微流体在硅基内的输送-流/固反应-内外交互机制，探索释放结构、侧壁保护、牺牲间隙等构形特性和硅基内三维体硅微结构间的关联机制和设计规则，阐明硅基内三维体硅微结构成型机理，开发出相应制造技术；其次，建立典型多轴（压力+Z轴加速度+X轴角速度）传感器理论模型，融合硅基内三维微结构技术开展单片集成多轴传感器复合结构的协同设计和制造技术研究，解决多轴传感器小型化、高性能、低成本和IC工艺兼容性制造难题；最后，开展器件性能测试与失效机理研究。上述研究对增强我国MEMS制造技术促进多轴传感器发展具有重要的理论意义和实际价值。

Miniaturization, high-performance, high-yield and low-cost volume production are the key factors restricting our industrialization of MEMS multi-axis sensor, and innovative and IC-Foundry compatible manufacturing technique of a single-wafer-based single-sided three-dimensional (3D) bulk-silicon microstructure inside silicon substrate is one of the effective ways to solve this problem. Aim to the abovementioned issues, a novel technology of 3D bulk-silicon microstructure inside silicon wafer and its application in monolithic integrated multi-axis sensor are proposed and developed. Firstly, the microscale confined-space microfluid dynamical model is established to analyze the mechanism of the microfluidic transport, etching reaction between the microfluid and the silicon, and fluid internal/external interaction inside silicon substrate, explore the correlation mechanism between the configuration properties of the release structure, sidewall protection, sacrificial gap, etc. and the 3D bulk-silicon microstructure inside silicon substrate, and the design rules of the release structure, sidewall protection, sacrificial gap, and so on. And then, the formation mechanism of 3D bulk-silicon microstructure inside silicon substrate is clarified, and the fabrication technique is developed. Secondly, on the basic of the developed fabrication technology of 3D bulk-silicon microstructure inside silicon substrate, the key technologies of the monolithic integrated multi-axis sensor are studied. After the theoretical model of the multi-axis (pressure+Z-axis acceleration+X-axis gyroscope) sensor is built, the fabrication technology of the 3D bulk-silicon microstructure inside silicon substrate and MEMS design technique are used to study on the structure collaborative-design and batch-fabrication of the monolithic integrated multi-axis sensor to realize the device for miniaturization, high-performance, low-cost, high-volume production and IC-foundry compatible fabrication. Finally, the relevant performance analysis and failure mechanism of the device would be carried out. In short, this study would be important theoretical and practical significance for improving the MEMS silicon micromachining technology and promoting the development of MEMS multi-axis sensor.