Strain-controlled impurity-induced disordered apertures for high-power single-mode VCSELs
Strain-controlled impurity-induced disordered apertures for high-power single-mode VCSELs
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高功率单模 VCSEL 的应变控制杂质引起的无序孔径
DOI：
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复制
发表时间：
2020
期刊：
影响因子：
--
通讯作者：
J. Dallesasse
中科院分区：
文献类型：
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作者：
Patrick Su;Kevin P. Pikul;F. Hsiao;T. O’Brien;J. Dallesasse
垂直腔表面发射激光器（VCSELs）中杂质引起的无序已经证明了更高的性能，例如更高的调制速度，更低的串联电阻，以及单模工作的高阶模式抑制。由于锌的扩散，杂质引起的无序混合导致离散的基于algaas的分布式Bragg反射器（DBR）对，导致镜面功率反射率降低，光学损耗增加。当形成一个中心非无序的孔径时，可以实现高阶横向模的抑制，从而实现高功率单模工作。对于最大模抑制，深无序孔径是可取的。然而，由于扩散的各向同性，这些孔径仅限于侵入基模的横向扩散。通过调整SiNx扩散掩膜的薄膜应力，证明了该掩膜具有改变无序孔径扩散前沿的能力。根据其横向与垂直（L/V）扩散比的定义，相应的SiNx扩散掩膜应变的L/V比为3.7至0.90，范围为压缩-797 MPa至拉伸+347 MPa。这表明拉伸应变扩散掩膜限制了横向扩散的量。通过改变SiH4/NH3的流动比，可以进一步减少侧向侵蚀，从而沉积更多的拉伸扩散掩膜。利用该扩散掩模制备了850 nm发射的高功率单模vcsel。与未优化的无序孔径制备的vcsel相比，实现了更强的横向模控制，单模输出功率超过3.8 mW，侧模抑制比大于30 dB。
Impurity-induced disordering in vertical-cavity surface-emitting lasers (VCSELs) has demonstrated enhanced performance such as higher modulation speeds, reduced series resistance, and higher-order mode suppression for singlemode operation. Initiated by the diffusion of Zn, impurity-induced disordering intermixes discrete AlGaAs-based distributed Bragg reflectors (DBR) pairs which leads to lower mirror power reflectivity and increased optical loss. When formed into an aperture where the center is non-disordered, suppression of higher-order transverse modes for high-power single-mode operation can be achieved. For maximal mode suppression, deep disordering apertures are desirable. However, due to the isotropic nature of diffusion, these apertures are limited to the lateral diffusion encroaching onto the fundamental mode. By tailoring the film stress of the SiNx diffusion mask, the capability to modify the diffusion front of the disordering aperture is demonstrated. Defined by their lateral-to-vertical (L/V) diffusion ratios, an L/V ratio of 3.7 to 0.90 is measured for corresponding SiNx diffusion mask strains ranging from a compressive -797 MPa to a tensile +347 MPa. This demonstrates that tensile strained diffusion masks limit the amount of lateral diffusion. To further reduce the lateral encroachment, increasingly tensile diffusion masks are deposited by modifying the SiH4/NH3 flow ratios. This diffusion mask is employed to fabricate high-power single-mode VCSELs designed for 850 nm emission. Compared to VCSELs fabricated with non-optimized disordering apertures, enhanced transverse-mode control is achieved and singlemode output power in excess of 3.8 mW with a side mode suppression ratio greater than 30 dB is measured.
通过高性能垂直腔表面发射激光器的掩模应变控制杂质引起的无序
DOI：
--
发表时间：
2018
期刊：
2018 International Conference on Compound Semiconductor Manufacturing Technology
影响因子：
--
作者：
Su, P.;O’Brien, T.;Hsiao, F. C.;Dallesasse, J. M.
通讯作者：
Dallesasse, J. M.
控制高性能 VCSEL 光模工程中杂质引起的无序的晶圆级方法
影响因子：
2.7
作者：
Su, Patrick;Hsiao, Fu-Chen;O'Brien, Thomas;Dallesasse, John M.
通讯作者：
Dallesasse, John M.