Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics
Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics
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光电用蓝宝石上六方氮化硼薄膜的外延生长
DOI：
10.1021/acs.cgd.2c00880
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发表时间：
2022-11
期刊：
影响因子：
--
通讯作者：
Xingwang Zhang
中科院分区：
文献类型：
--
作者：
Gaokai Wang;Junhua Meng;Jingren Chen;Yong Cheng;Jidong Huang;Siyu Zhang;Zhigang Yin;Ji Jiang;Jinliang Wu;Xingwang Zhang
宽带隙六方氮化硼（h-BN）由于其上级性能和潜在的光电子学应用前景，近年来引起了人们的广泛关注。然而，通常需要极高的衬底温度以在介电衬底上获得高度结晶的h-BN膜，这对于大多数电子器件应用是高度期望的。在这项工作中，晶圆级的高结晶质量的h-BN薄膜已获得通过高温退火PLD生长的非晶BN薄膜。结果表明，退火后的h-BN薄膜在蓝宝石上外延生长，取向关系为：h-BN（0001）[11 <$00]//sapphire（0001）[11 <$00]。窄的拉曼峰和XRD摇摆曲线，以及观察到的强激子发射，表明我们的外延h-BN薄膜的高结晶质量。此外，从退火的h-BN薄膜制造的光电探测器表现出优异的器件性能，这表明高温退火是一种简单而有前途的策略，以获得高结晶度的h-BN薄膜的光电器件应用。
Recently, wide band gap hexagonal boron nitride (h-BN) has drawn considerable attention because of its superior properties and potential for optoelectronics applications. However, extremely high substrate temperatures are usually required to obtain highly crystalline h-BN films on dielectric substrates, which is highly desired for most electronic device applications. In this work, wafer-scale high-crystalline-quality h-BN films have been obtained via high-temperature annealing on PLD-grown amorphous BN films. It is found that the annealed h-BN film is epitaxially grown on sapphire with an orientation relationship: h-BN (0001)[11̅00]//sapphire (0001)[11̅00]. The narrow Raman peak and XRD rocking curve, as well as the observed strong excitonic emission, indicate the high crystalline quality of our epitaxial h-BN films. Moreover, the photodetectors fabricated from the annealed h-BN films exhibit an excellent device performance, suggesting that high-temperature annealing is a simple and promising strategy to obtain highly crystalline h-BN films for optoelectronic device applications.
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影响因子：
16.6
作者：
Song SB;Yoon S;Kim SY;Yang S;Seo SY;Cha S;Jeong HW;Watanabe K;Taniguchi T;Lee GH;Kim JS;Jo MH;Kim J
通讯作者：
Kim J
用于真正绿色发光二极管的六方氮化镓应变释放氮化镓薄膜辅助外延
DOI：
10.1002/advs.202000917
发表时间：
2020-11
期刊：
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
影响因子：
--
作者：
Liu F;Yu Y;Zhang Y;Rong X;Wang T;Zheng X;Sheng B;Yang L;Wei J;Wang X;Li X;Yang X;Xu F;Qin Z;Zhang Z;Shen B;Wang X
通讯作者：
Wang X
影响因子：
5.5
作者：
Chugh, D.;Wong-Leung, J.;Jagadish, C.
通讯作者：
Jagadish, C.
影响因子：
5.5
作者：
Xu Yang;S. Nitta;M. Pristovsek;Yuhuai Liu;Y. Liao;M. Kushimoto;Y. Honda;H. Amano
通讯作者：
Xu Yang;S. Nitta;M. Pristovsek;Yuhuai Liu;Y. Liao;M. Kushimoto;Y. Honda;H. Amano
铜上 100 平方厘米单晶六方氮化硼单层的外延生长
影响因子：
64.8
作者：
Wang, Li;Xu, Xiaozhi;Liu, Kaihui
通讯作者：
Liu, Kaihui