Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.
Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.
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用于真正绿色发光二极管的六方氮化镓应变释放氮化镓薄膜辅助外延
DOI：
10.1002/advs.202000917
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发表时间：
2020-11
期刊：
影响因子：
--
通讯作者：
Wang X
中科院分区：
文献类型：
--
作者：
Liu F;Yu Y;Zhang Y;Rong X;Wang T;Zheng X;Sheng B;Yang L;Wei J;Wang X;Li X;Yang X;Xu F;Qin Z;Zhang Z;Shen B;Wang X
III族氮化物在2D材料上的外延生长使下一代可穿戴应用的柔性光电器件得以实现。不幸的是，由于不同的原子杂化，很难在2D材料如六方BN（h-BN）上获得高质量的III族氮化物外延层。在这里，单晶GaN薄膜的化学活化的h-BN/Al 2 O3衬底上的外延报道，注意界面原子配置。发现化学活化的h-BN提供B-O-N和N-O键，其中后者充当用于随后GaN成核的有效人工悬挂键，导致具有平坦表面的Ga极性GaN膜。还发现h-BN在改变GaN膜中的压缩应变方面是有效的，并且因此在InGaN量子威尔斯的生长期间改善铟掺入，从而实现纯绿色发光二极管。该工作为在h-BN上外延III族氮化物提供了一种有效的途径，也为克服高铟含量III族氮化物发光器件的外延瓶颈提供了一条可能的途径。在六方BN（h-BN）/蓝宝石衬底上进行单晶GaN膜的外延。这一成功是通过h-BN上的化学活化实现的，其产生N-O键，从而为Ga极性GaN提供成核位点。随后，制备了纯绿色InGaN基发光二极管，其中铟掺入量显著增加，在长波长发光二极管中显示出巨大的潜力。
Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al2O3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices. Epitaxy of single‐crystalline GaN films is performed on hexagonal BN (h‐BN)/sapphire substrates. This success is achieved through chemical activation on h‐BN, which generates N—O bonds, and thus provides nucleation sites for Ga‐polar GaN. Subsequently, pure green InGaN‐based light‐emitting diodes are fabricated with a considerable increase of indium incorporation, manifesting a great potential in long wavelength light‐emitting diodes.
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影响因子：
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