Invited: Approximate computing with partially unreliable dynamic random access memory — Approximate DRAM
Invited: Approximate computing with partially unreliable dynamic random access memory — Approximate DRAM
复制标题
邀请:部分不可靠动态随机存取存储器的近似计算â近似DRAM
DOI:
10.1145/2897937.2905002
复制
发表时间:
2016
期刊:
影响因子:
--
通讯作者:
N. Wehn
中科院分区:
文献类型:
--
作者:
M. Jung;D. Mathew;C. Weis;N. Wehn
In the context of approximate computing,Approximate Dynamic Random Access Memory(ADRAM) enables the tradeoff between energy efficiency, performance and reliability. The inherent error resilience of applications allows sacrificing data storage robustness and stability by lowering the refresh rate or disabling refresh in DRAMs completely. Consequently, it is important to know exactly the statistical DRAM behavior with respect to retention time, process variation and temperature to manage this trade-off and thereby deliberately exploiting the error resilience of different target applications.
登录
查看更多内容
DOI:
--
发表时间:
2015
期刊:
Design Automation Conference
影响因子:
--
作者:
Hyungmin Cho;Chen;Thomas Shepherd;S. Mitra
通讯作者:
S. Mitra
影响因子:
2
作者:
Gimmler-Dumont, Christina;Wehn, Norbert
通讯作者:
Wehn, Norbert
DOI:
10.1109/aspdac.2016.7428043
发表时间:
2016
期刊:
2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)
影响因子:
--
作者:
Matthias Jung;Deepak M. Mathew;C. Weis;N. Wehn
通讯作者:
N. Wehn
DOI:
--
发表时间:
2014
期刊:
ICCD
影响因子:
--
作者:
Siddharth Advani;Nandhini Chandramoorthy;Karthik Swaminathan;K. M. Irick;Yong Cheol Peter Cho;Jack Sampson;N. Vijaykrishnan
通讯作者:
N. Vijaykrishnan
影响因子:
2
作者:
D. Khudia;Babak Zamirai;M. Samadi;S. Mahlke
通讯作者:
S. Mahlke