Dependence of Al3+ on the growth mechanism of vertical standing ZnO nanowalls and their NO2 gas sensing properties

Dependence of Al3+ on the growth mechanism of vertical standing ZnO nanowalls and their NO2 gas sensing properties
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Al3 对垂直 ZnO 纳米墙生长机制及其 NO2 气敏性能的依赖性

DOI:
10.1016/j.snb.2014.07.071
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发表时间:
2014-12
期刊:
Sensors and Actuators B
影响因子:
--
通讯作者:
于灵敏
于灵敏
中科院分区:
其他
文献类型:
--
作者:
于灵敏

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以Zn(CH 3COO)2·2 H2O和Al(NO3)3·9 H2O为晶种,采用两步软水溶液法在ITO玻璃衬底上成功制备了垂直取向的ZnO纳米晶。结果表明,Al 3+在ZnO纳米球的合成中起着关键作用。ZnAl 2 O 4缓冲层不仅降低了ITO玻璃衬底的表面能,而且有利于ZnO的成核。研究了生长水溶液对形貌剪裁的影响。此外,基于垂直站立的ZnO电极的气体传感器被制造以检查对NO2(1-50 ppm)的响应。在220 °C的工作温度下,ZnO薄膜对50 ppm的NO2有很好的响应,最高可达30 ppm。此外,ZnO球显示出快速响应(30秒)和恢复(48秒)时间NO2。这些结果表明,垂直放置的ZnO膜在NO2传感器中具有良好的应用前景。
In the present work, vertically well-aligned of ZnO nanowalls were successfully obtained on ITO glass substrate via a facile two-step soft aqueous solution using Zn(CH3COO)2·2H2O and Al(NO3)3·9H2O as the source materials in seed solution. Results showed that Al3+played a critical role in synthesizing ZnO nanowalls. The ZnAl2O4buffer layer not only reduced the surface energy of ITO glass substrate but also supported easy nucleation for ZnO. The effect of growth aqueous solution on tailoring morphology was investigated. Moreover, gas sensors based on the vertical standing ZnO nanowall were fabricated to examine the responses to NO2(1–50 ppm). The ZnO nanowalls exhibited a good response toward 50 ppm NO2as high as 30 at the operating temperature of 220 °C. In addition, the ZnO nanowalls showed fast response (30 s) and recovery (48 s) time to NO2. These results showed that the vertical standing ZnO nanowalls were promising for NO2sensor applications.
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