Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
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色散效应对AlGaN/GaN高电子迁移率晶体管电流电压特性的影响
DOI：
10.1088/1674-1056/20/9/097305
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发表时间：
2011-09
影响因子：
1.7
通讯作者：
Liu Xin-Yu
中科院分区：
文献类型：
--
作者：
Pu Yan;Pang Lei;Chen Xiao-Juan;Yuan Ting-Ting;Luo Wei-Jun;Liu Xin-Yu
AlGaN/GaN高电子迁移率晶体管的电流电压(IV)特性很大程度上受到色散效应的影响。进行直流 (DC) IV 和脉冲 IV 测量是为了深入研究色散效应，这主要与陷阱和自加热机制有关。结果表明，陷阱在扭结效应中起着重要作用，高应力会在器件中引入更多的陷阱和缺陷。借助脉冲 IV 测量，可以将捕获效应和自热效应分开。还讨论了时间常数对色散效应的影响。为了实现精确的静态 DC IV 测量，必须仔细考虑偏置点的稳态以避免色散效应。
The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.
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影响因子：
4.9
作者：
Kuball, M;Hayes, JM;Hughes, BT
通讯作者：
Hughes, BT
影响因子：
3.1
作者：
Binari, SC;Ikossi, K;Henry, RL
通讯作者：
Henry, RL
影响因子：
3.2
作者：
J. Varley;B. Shen;M. Higashiwaki
通讯作者：
J. Varley;B. Shen;M. Higashiwaki
DOI：
10.7498/aps.59.5730
发表时间：
2010-08
期刊：
--
影响因子：
--
作者：
Wang Lin;Hu Weida;Chen Xiaoshuang;Lu Wei
通讯作者：
Wang Lin;Hu Weida;Chen Xiaoshuang;Lu Wei
影响因子：
3.1
作者：
W. Ho;C. Surya;K. Tong;L. Lu;W. Ge
通讯作者：
W. Ho;C. Surya;K. Tong;L. Lu;W. Ge