Observation of Silicon Nitride Nanomechanical Resonator Actuation Using Capacitive Substrate Excitation
Observation of Silicon Nitride Nanomechanical Resonator Actuation Using Capacitive Substrate Excitation
复制标题
使用电容基板激励观察氮化硅纳米机械谐振器的驱动
DOI：
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
R. St
中科院分区：
文献类型：
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作者：
G. Mu;N. Snell;Chang Zhang;Xitong Xie;R. Tahvildari;A. Weck;M. Godin;R. St
我们观察到的驱动氮化硅（SiN）纳米机械谐振器的电激励的金属-介质-半导体（MDS）电容器在其支持硅衬底。我们开发的第一原理模型解释这种致动机制的声波产生的电压依赖性的静电力在MDS电容器。模型被开发为在电荷积累（Ni-pSi）和电荷耗尽（Al-pSi）制度的驱动。实验观察证实了我们的预测，即电荷积累（Ni-pSi）是更有效的驱动比电荷耗尽。对于2 V激励信号，Ni-pSi电容器在方形（1.7 × 1.7 mm）低应力（~100 MPa）SiN膜谐振器中实现10 nm激励幅度。在这种情况下，芯片中的电功率耗散约为0.1 μW，寄生加热小于1 mK。这两个值都可以通过掺杂衬底以最小化电阻耗散来进一步降低。该驱动方法非常简单，只需要用真空兼容的镍膏将导线连接到芯片上，而不需要额外的光刻步骤。所有的芯片在这项工作中提出的内部制造，并提供了详细的制造过程。
We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this actuation mechanism by acoustic waves resulting from voltage-dependent electrostatic forces in the MDS capacitors. Models are developed for actuation in the charge accumulation (Ni-pSi) and charge depletion (Al-pSi) regimes. Experimental observations confirm our prediction that charge accumulation (Ni-pSi) is more efficient at actuation than charge depletion. For a 2 V actuation signal, Ni-pSi capacitors achieve 10 nm actuation amplitude in square (1.7 × 1.7 mm) low-stress (~100 MPa) SiN membrane resonators. In this case, electrical power dissipation in the chip is on the order of 0.1 μW, and spurious heating is less than 1 mK. Both these values could be further reduced by doping the substrate to minimize resistive dissipation. The actuation method is remarkably simple and only requires attachment of wires to the chip with vacuum-compatible nickel paste, with no extra photolithography step. All the chips presented in this work are fabricated in-house, and a detailed fabrication procedure is provided.
影响因子：
4
作者：
J. Ransley;A. Aziz;C. Durkan;A. Seshia
通讯作者：
J. Ransley;A. Aziz;C. Durkan;A. Seshia
影响因子：
3.2
作者：
V. Adiga;B. Ilic;Robert A. Barton;I. Wilson-Rae;H. Craighead;J. Parpia
通讯作者：
V. Adiga;B. Ilic;Robert A. Barton;I. Wilson-Rae;H. Craighead;J. Parpia
影响因子：
64.8
作者：
Unterreithmeier, Quirin P.;Weig, Eva M.;Kotthaus, Joerg P.
通讯作者：
Kotthaus, Joerg P.