Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias
Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias
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双栅偏压异质结沟道非晶氧化物薄膜晶体管载流子传输特性研究
DOI：
10.1109/led.2022.3223080
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发表时间：
2023-01
影响因子：
4.9
通讯作者：
Shengdong Zhang
中科院分区：
文献类型：
--
作者：
Huan Yang;Xiaoliang Zhou;Lei Lu;Shengdong Zhang
研究了双层非晶氧化物半导体（AOS）异质结薄膜晶体管（TFT）的载流子输运特性。这种异质结沟道的迁移率表现出明显的顶栅（TG）电压（<inline-formula><tex-math notation="LaTeX">$V_{\text {TG}}$</tex-math></inline-formula>）和底栅（BG）电压（<inline-formula><tex-math notation="LaTeX">$V_{\text {BG}}$</tex-math></inline-formula>）的依赖性。在TG模式下，迁移率保持良好，其中<inline-formula><tex-math notation="LaTeX">V_{\text {TG}}$</tex-math></inline-formula>与异质结界面处形成的电子势阱（PW）的内建电场一致。相反，增加的<inline-formula><tex-math notation="LaTeX">$V_{\text {BG}}$</tex-math></inline-formula>逐渐将高迁移率降低到单层沟道的水平，因为与PW相反方向的高<inline-formula><tex-math notation="LaTeX">$V_{\text {BG}}$</tex-math></inline-formula>可以消除PW。这从实验上阐明了AOS异质结沟道的高迁移率输运路径位于界面PW中，其工作需要合适的栅场方向。这直接通过所公开的独特电容-电压特性来巩固。
The carrier transport properties in amorphous oxide semiconductor (AOS) heterojunction thin-film transistors (TFTs) are investigated by using dual gates to control the channel of bilayer AOSs. The mobility of such heterojunction channel exhibited distinct dependences on top-gate (TG) voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\text {TG}}$ </tex-math></inline-formula>) and bottom-gate (BG) voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\text {BG}}$ </tex-math></inline-formula>) The mobility was well maintained in TG mode, where <inline-formula> <tex-math notation="LaTeX">$V_{\text {TG}}$ </tex-math></inline-formula> was in line with the build-in electric field of the electron potential well (PW) formed at the heterojunction interface. In contrast, an increased <inline-formula> <tex-math notation="LaTeX">$V_{\text {BG}}$ </tex-math></inline-formula> gradually reduced the high mobility to the level of a single layer channel, since a high <inline-formula> <tex-math notation="LaTeX">$V_{\text {BG}}$ </tex-math></inline-formula> in the opposite direction of PW could eliminate the PW. This experimentally clarifies that the high-mobility transport path of AOS heterojunction channel locates in the interface PW and its operation demands a proper gate field direction. This were directly consolidated by the disclosed unique capacitance-voltage characteristics.
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影响因子：
3.7
作者：
Ji, Dongseob;Jang, Jisu;Noh, Yong-Young
通讯作者：
Noh, Yong-Young
DOI：
10.1002/sdtp.14615
发表时间：
2021-05
期刊：
SID Symposium Digest of Technical Papers
影响因子：
--
作者：
Jewel Kumer Saha;Arqum Ali;Mobaidul Islam;Ravindra Naik Bukke;Jin Jang
通讯作者：
Jewel Kumer Saha;Arqum Ali;Mobaidul Islam;Ravindra Naik Bukke;Jin Jang
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
影响因子：
3.7
作者：
Gwon Byeon;S. Jang;Tae-Moo Roh;Ji‐Min Park;Hyunsook Kim;Yong‐Young Noh
通讯作者：
Gwon Byeon;S. Jang;Tae-Moo Roh;Ji‐Min Park;Hyunsook Kim;Yong‐Young Noh
使用超薄溶液加工 ZrOx 电介质的高性能全非晶双层金属氧化物薄膜晶体管
影响因子：
4
作者：
Liu, G. X.;Liu, A.;Martins, R.
通讯作者：
Martins, R.