N dependent tribochemistry: Achieving superhard wear-resistant low-friction TaCxNy films
N dependent tribochemistry: Achieving superhard wear-resistant low-friction TaCxNy films
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N 相关摩擦化学:实现超硬耐磨低摩擦 TaCxNy 薄膜
DOI:
10.1016/j.surfcoat.2017.09.006
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发表时间:
2017-11
影响因子:
5.4
通讯作者:
Weitao Zheng
中科院分区:
文献类型:
--
作者:
Suxuan Du;Kan Zhang;Qingnan Meng;Ping Ren;Chaoquan Hu;Mao Wen;Weitao Zheng
Wear-resistant low-friction films have been widely applied to various engineered components to prolong their service lifetime, in which the mechanical properties of films need to be optimized for their intended applications and contact situations. The design and fabrication of superhard wear-resistant low-friction films can broaden the work situations of machine parts to some harsh conditions, i.e. subjecting to the attack of hard particles. Here, superhard wear-resistant low-friction TaCxNyfilms were deposited by sputtering a TaC composite target in the mixed discharge gases of N2and Ar. The N content in solid solution TaCxNyfilms can tailor the valence-electron concentration (VEC) and surface chemistry forming graphitic clusters, achieving the maximum hardness of 41.5 GPa and lowest wear rate of 0.6 × 10− 6mm3/Nm, coupled with low friction coefficient (μ) of 0.18 in TaC0.60N0.33film, simultaneously. The results show that the wear rate of solid solution TaCxNyfilms is mainly governed by hardness and the ratio of hardness (H) and elastic modulus (E). The tribochemistry could be identified as TaCxNy+ O2→ TaOx+ C + N2/ NOxby the combined results of Raman spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscope. The reduction of theμis shown to depend on the amount of the graphitic clusters generated in tribochemical reaction caused by shear stress, which can be tailored by N content.
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影响因子:
5.4
作者:
Zhang, Kan;Wen, M.;Wang, S.;Deng, R.P.;Gall, D.;Zheng, W.T.
通讯作者:
Zheng, W.T.
DOI:
--
发表时间:
1996-12
期刊:
--
影响因子:
--
作者:
H. Pierson
通讯作者:
H. Pierson
影响因子:
6.2
作者:
I. Shabalin;V. Vishnyakov;D. Bull;S. Keens;L. Yamshchikov;L. I. Shabalin
通讯作者:
I. Shabalin;V. Vishnyakov;D. Bull;S. Keens;L. Yamshchikov;L. I. Shabalin
影响因子:
19
作者:
O. Wilhelmsson;M. Råsander;Mattias Carlsson;E. Lewin;B. Sanyal;U. Wiklund;O. Eriksson;U. Jansson
通讯作者:
O. Wilhelmsson;M. Råsander;Mattias Carlsson;E. Lewin;B. Sanyal;U. Wiklund;O. Eriksson;U. Jansson
影响因子:
5.4
作者:
E. Silva;M. R. Figueiredo;R. Franz;R. Galindo;C. Palacio;A. Espinosa;C. Mitterer;S. Carvalho
通讯作者:
E. Silva;M. R. Figueiredo;R. Franz;R. Galindo;C. Palacio;A. Espinosa;C. Mitterer;S. Carvalho