A Pulse-Biasing Small-Signal Measurement Technique Enabling 40 MHz Operation of Vertical Organic Transistors.
A Pulse-Biasing Small-Signal Measurement Technique Enabling 40 MHz Operation of Vertical Organic Transistors.
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DOI：
10.1038/s41598-018-26008-0
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发表时间：
2018-05-16
影响因子：
4.6
通讯作者：
Ellinger F
中科院分区：
文献类型：
--
作者：
Kheradmand-Boroujeni B;Klinger MP;Fischer A;Kleemann H;Leo K;Ellinger F
有机/聚合物晶体管可以制造大面积柔性电路。然而，由于电荷载流子迁移率对温度的强烈依赖性，这些器件本质上对温度敏感，受到塑料基板导热率低的影响，并且由于迁移率低和沟道长度（L）长而速度慢。在这里，我们报告了一种新的、先进的表征电路，该电路在大约十微秒内同时向晶体管施加精确的大信号脉冲偏置和小信号正弦激励，并测量许多高频参数。这显着减少了自热，因此可以在已知结温下提供更准确的数据，以便将模型参数拟合到结果，实现超过 10 倍宽的偏置 I-V 范围的小信号表征，偏置应力影响减少约 105 倍。表征了使用 C60 富勒烯半导体制造的物理 L = 200 nm 的完全热蒸发垂直渗透基极晶体管。固有增益高达 35dB，在 8.6V 下实现了 40MHz 的创纪录传输频率（单位电流增益截止频率，fT）。有趣的是，在高电流下没有观察到 fT − I 和跨导 (gm − I) 饱和。这为将高频功能集成到有机电路中铺平了道路，例如长距离无线通信和开关电源转换器。
Organic/polymer transistors can enable the fabrication of large-area flexible circuits. However, these devices are inherently temperature sensitive due to the strong temperature dependence of charge carrier mobility, suffer from low thermal conductivity of plastic substrates, and are slow due to the low mobility and long channel length (L). Here we report a new, advanced characterization circuit that within around ten microseconds simultaneously applies an accurate large-signal pulse bias and a small-signal sinusoidal excitation to the transistor and measures many high-frequency parameters. This significantly reduces the self-heating and therefore provides data at a known junction temperature more accurate for fitting model parameters to the results, enables small-signal characterization over >10 times wider bias I–V range, with ~105 times less bias-stress effects. Fully thermally-evaporated vertical permeable-base transistors with physical L = 200 nm fabricated using C60 fullerene semiconductor are characterized. Intrinsic gain up to 35 dB, and record transit frequency (unity current-gain cutoff frequency, fT) of 40 MHz at 8.6 V are achieved. Interestingly, no saturation in fT − I and transconductance (gm − I) is observed at high currents. This paves the way for the integration of high-frequency functionalities into organic circuits, such as long-distance wireless communication and switching power converters.
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