Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
复制标题
硅衬底上生长的钴掺杂 ZnO 薄膜中界面作为铁磁性的起源
DOI：
10.1063/1.2989128
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发表时间：
2008-10
影响因子：
4
通讯作者：
Yin, Z. G.
中科院分区：
文献类型：
--
作者：
Chai, C. L.;Zhang, X. W.;Li, Y.;Bai, Y. M.;Zhang, J.;Chen, N. F.;Xie, Y. N.;Yin, Z. G.
We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128]
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