Silver stoichiometry engineering: an alternative way to improve energy storage density of AgNbO3-based antiferroelectric ceramics
Silver stoichiometry engineering: an alternative way to improve energy storage density of AgNbO3-based antiferroelectric ceramics
复制标题
银化学计量工程：提高AgNbO3基反铁电陶瓷储能密度的替代方法
DOI：
10.1557/s43578-020-00018-z
复制
发表时间：
2021-01
影响因子：
2.7
通讯作者：
Toyohisa Fujita
中科院分区：
文献类型：
--
作者：
Nengneng Luo;Xinya Tang;Kai Han;Li Ma;Zhenpei Chen;Xiyong Chen;Qin Feng;Changzheng Hu;Yuezhou Wei;Toyohisa Fujita
高储能密度的无铅介质电容器需求量很大，但储能密度有限。本文以提高储能密度为目的，制备了非化学计量比Ag 2 O的Ag（Nb0.85Ta0.15）O3-x wt% Ag 2 O（ANTAx）无铅陶瓷。研究了材料的元素含量、相结构、显微结构、介电性能和储能性能。当Ag_2O过量1wt%时，可恢复储能密度（Wrec）达到4.8J/cm ~ 3，比化学计量比有明显提高。此外，ANTA 1陶瓷在室温至150°C的温度范围内也表现出高度稳定的储能性能，Wrec和储能效率的变化分别小于4%和5%。这些良好的性能可能与加入过量的Ag_2O消除了各种缺陷有关。研究表明，银化学计量工程是提高AgNbO 3基反铁电陶瓷储能性能的有效方法。
Lead-free dielectric capacitor with high energy storage density is in great demand, but with the challenge of limited energy storage density. In this work, Ag(Nb0.85Ta0.15)O3-x wt% Ag2O (ANTAx) lead-free ceramics with nonstoichiometric Ag2O were fabricated, with the aim of improving energy storage density. The element concentration, phase structure, microstructure, dielectric property, and energy storage performance were investigated. Improved recoverable energy storage density (Wrec) of 4.8J/cm3 were achieved for ANTA1 ceramics with 1 wt% Ag2O in excess, demonstrating obvious improvement compared with the stoichiometric counterpart. In addition, the ANTA1 ceramics also exhibited highly stable energy storage performance in the temperature range from room temperature to 150°C, with variations less than 4% and 5% for Wrec and energy storage efficiency, respectively. The good properties may be associated with the dismissing of various defects by adding excess Ag2O. This work demonstrates that silver stoichiometry engineering is an effective method to improve energy storage properties of AgNbO3-based antiferroelectric ceramics.
登录
查看更多内容
影响因子：
3.9
作者：
H. Zhou;X. Liu;Xiao Li Zhu;X. Chen
通讯作者：
H. Zhou;X. Liu;Xiao Li Zhu;X. Chen
影响因子：
11.9
作者：
Yan Zhongna;Zhang Dou;Zhou Xuefan;Qi He;Luo Hang;Zhou Kechao;Abrahams Isaac;Yan Haixue
通讯作者：
Yan Haixue
在Agnbo中构建相边界（3）抗fiferroelectrics：同时达到高能量密度和效率的途径。
影响因子：
16.6
作者：
Luo N;Han K;Cabral MJ;Liao X;Zhang S;Liao C;Zhang G;Chen X;Feng Q;Li JF;Wei Y
通讯作者：
Wei Y
影响因子：
3.9
作者：
Li-Qian Cheng;Ke Wang;Fang-Zhou Yao;F. Zhu;Jingfeng Li
通讯作者：
Li-Qian Cheng;Ke Wang;Fang-Zhou Yao;F. Zhu;Jingfeng Li
A位/B位共掺杂AgNbO3无铅反铁电陶瓷的超高储能密度：洞察反铁电的起源
影响因子：
11.9
作者：
Han, Kai;Luo, Nengneng;Wei, Yuezhou
通讯作者：
Wei, Yuezhou