课题基金 / 基金详情

Presidential Young Investigator Award: Transport Phenomena Related to Processing of Electronics Materials

Presidential Young Investigator Award: Transport Phenomena Related to Processing of Electronics Materials
总统青年研究员奖:与电子材料加工相关的传输现象
批准号:
8451112
负责人:
Richard Pollard
金额:
$31.2万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1985
资助国家:
美国
项目状态:
已结题
起止时间:
1985-07-01 至 1991-12-31

项目摘要

项目成果

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中文摘要
翻译
该项目的总体目的是结合输运现象分析和良好表征的实验,建立一个基本框架,以理解与电子和电化学材料加工相关的问题。通过硅和硼的化学气相沉积合成电子材料扩展到阐明更复杂的过程,包括自掺杂现象和从有机金属反应物生产新的化合物半导体。在第二个研究领域,对铁氧体和陶瓷的制造以及气相催化中的固-气-固相互作用进行了定量评价。最后,正在进行的研究将用于提高我们对半导体聚合物、电催化剂和其他用于电化学应用的新材料的多孔电极的理解。
英文摘要
The overall purpose of this project is to combine transport phenomena analysis and well-characterized experiments to establish a fundamental framework for understanding problems associated with the processing of electronic and electrochemical materials. The synthesis of electronic materials by chemical vapor deposition of silicon and boron is extended to elucidate more complex processes including autodoping phenomena and the production of new compound semiconductors from organometallic reactants. In a second area of research, a quantitative evaluation is conducted of solid-gas-solid interactions in the manufacture of ferrites and ceramics and in gas phase catalysis. Finally, studies are underway that will be used to improve our understanding of porous electrodes of semiconducting polymers, electrocatalysts, and other new materials for electrochemical applications.
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会议论文
First Engineering Foundation Conference on Processing of Electronic Materials; February 23-28, 1986; Santa Barbara, CA
  • 批准号:
    8513719
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    1986
  • 负责人:
    Richard Pollard
  • 依托单位:
Research Initiation: Analysis of the Influence of Electric Field on Chemical Vapor Deposition of Silicon
  • 批准号:
    8203554
  • 项目类别:
    Standard Grant
  • 资助金额:
    $4.79万
  • 财政年份:
    1982
  • 负责人:
    Richard Pollard
  • 依托单位:
海外基金