Nonlinear Modeling and Characterization of Gallium Arsenide Mesfets and Related Devices

本研究计划主要对亚微米栅长微波场效应晶体管的非线性特性进行建模。重点发展了一种利用速度群求解玻耳兹曼输运方程的非平衡电荷输运模型的新方法。速度组允许隔离单个散射现象的影响，同时放宽了蒙特卡罗解的计算要求。另一个重点是利用这些结果来开发与微波电路分析程序兼容的器件模型。这些模型在高电子迁移率晶体管中的潜在应用将被考虑。波音超级计算机中心提供两年内每年25个CPU小时的访问。

This research program focuses on modeling of nonlinear properties of submicron gate length microwave field effect transistors. Emphasis is on developing a new method of modeling nonequilibrium charge transport which uses velocity groups to solve the Boltzmann transport equations. Velocity groups allow the effects of individual scattering phenomena to be isolated, while relaxing the computational requirements of Monte Carlo solutions. An additional focus is to utilize these results to develop device models compatible with microwave circuit analysis programs. The potential application of these models to high electron mobility transistors will be considered. Access to the Boeing Supercomputer Center for 25 CPU hours in each of two years is provided.