Intraband Processes and New Device Concepts

该研究项目涉及与带内(而不是带间)工艺相关的新半导体器件概念的开发、相关器件物理以及相关红外(IR)实验。器件包括量子井红外探测器和光源，以及采用非传统检测模式的非本征硅红外探测器。将进行建模，以降低对先前提出的量子井红外探测器结构的成分控制要求，这种结构提供了高量子效率、窄带检测的可能性，并且比采用带间跃迁的窄能隙长波长探测器(如HgCdTe)提供了更少的材料问题。我们将研究如何改进量子阱带内跃迁光子源。近红外带内量子阱器件需要更大的势垒高度和间接带隙材料。成分简单的(GaAs-AlAs)器件还包括间接带隙势垒。高间接带隙势垒对载流子动力学的影响将作为已经开始的关于电子和空穴与势垒相互作用的理论工作的延伸而被研究。这项工作包括晶格失配的影响，并将扩展到包括应变的影响。

The research project involves development of new semiconductor device concepts associated with intraband (as opposed to interband) processes, related device physics, and related infrared (IR) experiments. Devices include quantum well IR detectors and sources, as well as extrinsic silicon IR detectors employing unconventional modes of detection. Modeling will be carried out to decrease compositional control demands on previously proposed quantum well IR detector structures which offer the possibility of high quantum efficiency, narrow band detection and fewer materials problems than narrow gap long wavelength detectors like HgCdTe which employ interband transitions. Improvements in quantum well intraband transition photon sources will be studied. Near IR intraband quantum well devices require larger barrier heights and indirect gap materials. Compositionally simple (GaAs-AlAs) devices also involve indirect gap barriers. The effect of high indirect gap barriers on carrier dynamics will be examined as an extension of theoretical work already begun on the interaction of electrons and holes with barriers. That work includes the effect of lattice mismatch and will be extended to include the effect of strain.