Semiconductor Physical Electronics at Low Temperatures

半导体材料的低温物理电子学 和设备将被研究。 包括一个综合的理论和 不同温度下载流子冻出的实验研究 半导体器件作为材料的函数，杂质类型（n或p） 以及物种、杂质浓度和温度。 温度 GaAs MESFET的工作特性的依赖性，Si MOSFET的，和MOSFET的将被调查。 一种具有以下结构的MOSFET： 很像MOSFET，但具有相同导电性的衬底 类型Source and Drain。 虽然它是一个低线性电阻在室温 在低于该温度的温度下，它的功能非常类似于MOSFET 用于载体冻出（例如4.2K）。

The physical electronics at low temperatures of semiconductor materials and devices will be studied. Included is a combined theoretical and experimental investigation of carrier freezeout for various semiconductor devices as a function of material, impurity type (n or p) and specie, impurity concentration and temperature. The temperature dependence of the operating characteristics of GaAs MESFET's, Si MOSFET's, and CRYOFET's will be investigated. A CRYOFET has structure much like that of a MOSFET but has substrate of the same conductivity type Source and Drain. While it is a low linear resistance at room temperature it functions much like a MOSFET at temperatures below that for carrier freezeout (e.g. 4.2 K).