Dynamics and Structural Order of Noncrystalline Semiconductors

用拉曼散射研究薄膜非晶固体将 提供有关动态的基本信息， 非晶态半导体的结构顺序。 拉曼光谱研究 将用于薄膜和薄膜几何形状。 这 包括“修改的几何形状”，例如界面，空隙， 超小微晶和薄膜岛 配置. 关于这些特殊效果的信息 振动拉曼光谱上的几何结构进行了研究。 这些 实验利用拉曼散射增强方法 与这样的配置相关联的弱信号电平被 探讨了 薄膜非晶固体的生长将是 通过俄歇电子能谱和选择性扫描监测 透射电子显微镜测量。 拉曼散射 测量将另外采用薄膜稀释 四面体配位非晶态合金 半导体非晶锗和非晶硅， 获取有关结构修饰的信息 非金属-金属过渡 补充这些拉曼研究 将是光学吸收和椭圆偏振光谱 测量电子状态的变化。

The study of thin film amorphous solids by Raman scattering will be employed to provide basic information on the dynamics and structural order of noncrystalline semiconductors. Raman studies will be utilized in thin and ultrathin film geometries. This includes "modified geometries" such as interfaces, voids, ultrasmall microcrystals and in ultrathin film island configurations. Information about the effects of these special geometries on the vibrational Raman spectra are studied. These experiments utilize Raman scattering enhancement methods to allow weak signal levels associated with such configurations to be explored. The growth of ultrathin film amorphous solids will be monitored by Auger electron spectroscopy and selected scanning transmission electron microscopy measurements. Raman scattering measurements will additionally be employed in thin film dilute alloys with tetrahedrally coordinated systems of amorphous semiconductors amorphous germanium and amorphous silicon to obtain information about structural modifications in the nonmetal-metal transition. Complementing these Raman studies will be optical adsorption and spectroscopic ellipsometry measurements of changes in the electronic states.