Raman Scattering of Ultrathin Film Semiconductors

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The study of ultrathin film amorphous and microcrystalline semiconductors will be utilized to obtain basic information on the physical properties and structure of systems extending to submonolayer coverages. A combination of Raman scattering enhancement methods, ultraviolet photoemission measurements of changes in the density-of-states with island size, and additional discrete wavelength ellipsometry measurements for studying film growth all will be performed in situ. Emphasis will be placed on the use of high nucleation density disordered carbon substrates used previously in studies of crystalline transition metals. Raman scattering methods will also be utilized to study clusters isolated in weakly interacting substrates. The basic goal of these studies is to obtain information on finite size effects and modified surface bonding on the vibrational, electronic and optical properties of semiconducting cluster systems.