Raman Scattering of Ultrathin Film Semiconductors

超薄膜半导体的拉曼散射

• 批准号: 8922305
• 负责人: Jeffrey Lannin
• 金额: $ 26.5万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-04-15 至 1994-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8922305&HistoricalAwards=false
• 关键词: Raman; Scattering; Ultrathin; Film; Semiconductors

The study of ultrathin film amorphous and microcrystalline semiconductors will be utilized to obtain basic information on the physical properties and structure of systems extending to submonolayer coverages. A combination of Raman scattering enhancement methods, ultraviolet photoemission measurements of changes in the density-of-states with island size, and additional discrete wavelength ellipsometry measurements for studying film growth all will be performed in situ. Emphasis will be placed on the use of high nucleation density disordered carbon substrates used previously in studies of crystalline transition metals. Raman scattering methods will also be utilized to study clusters isolated in weakly interacting substrates. The basic goal of these studies is to obtain information on finite size effects and modified surface bonding on the vibrational, electronic and optical properties of semiconducting cluster systems.

对超薄膜非晶和微晶半导体的研究将用于获得扩展到亚单层覆盖范围的系统的物理性质和结构的基本信息。 拉曼散射增强方法、状态密度随岛尺寸变化的紫外光电发射测量以及用于研究薄膜生长的附加离散波长椭圆光度测量的组合都将在原位进行。 重点将放在先前用于结晶过渡金属研究的高成核密度无序碳基底的使用上。 拉曼散射方法还将用于研究弱相互作用基底中孤立的簇。 这些研究的基本目标是获得有关半导体簇系统振动、电子和光学特性的有限尺寸效应和改性表面键合的信息。