Raman Scattering of Ultrathin Film Semiconductors

超薄膜非晶和微晶半导体的研究将被用来获得扩展到亚单层覆盖的系统的物理性质和结构的基本信息。拉曼散射增强方法的组合，随岛大小变化的态密度的紫外光发射测量，以及用于研究薄膜生长的额外离散波长椭偏测量，都将在原位进行。重点将放在使用高成核密度无序碳衬底以前使用的结晶过渡金属的研究。拉曼散射方法也将用于研究在弱相互作用的衬底中分离的团簇。这些研究的基本目标是获得有限尺寸效应和修饰表面键合对半导体团簇系统的振动、电子和光学性质的影响。

The study of ultrathin film amorphous and microcrystalline semiconductors will be utilized to obtain basic information on the physical properties and structure of systems extending to submonolayer coverages. A combination of Raman scattering enhancement methods, ultraviolet photoemission measurements of changes in the density-of-states with island size, and additional discrete wavelength ellipsometry measurements for studying film growth all will be performed in situ. Emphasis will be placed on the use of high nucleation density disordered carbon substrates used previously in studies of crystalline transition metals. Raman scattering methods will also be utilized to study clusters isolated in weakly interacting substrates. The basic goal of these studies is to obtain information on finite size effects and modified surface bonding on the vibrational, electronic and optical properties of semiconducting cluster systems.