PYI: Growth and Applications of Thin Epitaxial Semiconductor Layer for VLSI

研究超薄外延半导体层的生长和器件应用。生长实验将涉及应用有限反应处理技术，以尽量减少应变层的热暴露。该技术还允许原位生长不同成分的多层。这种原位加工可能是满足未来几代超大规模集成电路技术的均匀性和良率要求的关键步骤。气相源气体的使用也提供了一个有可能很容易扩大工业规模的过程。器件实验将利用这些层的材料特性来开发新型的电子和光电器件。计划对这些层的电子特性进行基础研究，以及它们对生长技术的依赖，以及实际的器件制造。初步实验将设计用于探索SiGe体系和其他硅基异质结构。

The growth and device applications of ultra-thin epitaxial semiconductor layers will be investigated. Growth experiments will involve the application of the Limited Reaction Processing technique to minimize the thermal exposure of strained layers. The technique also allows for the in-situ growth of multiple layers of different composition. Such in-situ processing could be a crucial step in meeting the uniformity and yield requirements of future generations of VLSI technology. The use of vapor phase source gases also gives a process that has the potential to be easily scaled up for industry. The device experiments will exploit the material properties of these layers to develop new kinds of electronic and opto-electronic devices. Fundamental studies of the electronic properties of these layers, and their dependence on growth techniques, as well as actual device fabrication are planned. Initial experiments will be designed to explore the SiGe system and other silicon-based heterostructures.