ROW: In-Situ Investigation of Gallium Arsenide Anodic Oxidation

表面红外光谱将应用于砷化镓阳极氧化的研究。该技术将用于预氧化砷化镓的表征，并用于氧化物形成时的研究。表面红外光谱将作为原位、多重内反射几何来直接测量砷化镓与生长电解质界面处阳极氧化物的化学成分和生长速率。这将有助于确定氧化物生长的反应机制、反应的化学动力学以及所产生的氧化层的组成。此外，将研究工艺参数对动力学和组成的影响，以确定最佳生长条件。天然氧化物作为半导体绝缘层的优点是加工简单，薄膜附着力可靠，系统纯度高。砷化镓的阳极氧化工艺已被证明是很有前途的。以往的研究表明，该过程是动力学控制的，但氧化反应的化学动力学和机理尚不清楚。原生氧化物对砷化镓的成功钝化已经成为其在集成电子和光学领域全面应用的障碍。

Surface infrared spectroscopy will be applied in this study of gallium arsenide anodic oxidation. The technique will be used both for the characterization of pre-oxidized gallium arsenide, and for investigation of the oxide as it is being formed. The surface infrared spectroscopy will be applied as an in-situ, multiple internal reflection geometry to directly measure the chemical composition and rate of growth of anodic oxides at the interface between gallium arsenide and the growth electrolyte. This will enable determination of the reaction mechanisms of the oxide growth, the chemical kinetics of the reactions, and the composition of the oxide layer produced. In addition, the effects of process parameters on kinetics and on composition will be investigated to determine optimum growth conditions. Advantages of native oxides as insulating layers on semiconductors include simplicity of processing, dependable film adhesion and system purity. The anodic oxidation process for gallium arsenide has been demonstrated as very promising. Previous studies have shown that the process is kinetically controlled, however the chemical kinetics and mechanisms of the oxidation reactions are not yet known. The successful passivation of gallium arsenide by native oxides has been a barrier to their full scale application in integrated electronics and optics.