Gallium Arsenide Sulfidation

砷化镓硫化

• 批准号: 9018236
• 负责人: Veronica Burrows
• 金额: $ 15.83万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-02-01 至 1994-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9018236&HistoricalAwards=false
• 关键词: Gallium; Arsenide; Sulfidation

The goal of this work is to understand and control the chemical nature of particular types of processing used to passivate GaAs surfaces for improved electronic device performance, uniformity and reliability. The chemical nature of sulfidation of GaAs, its dependence on particular processing parameters, and long term response to heat, light, and ambient gases are being studied. Infrared spectroscopy is used for real time in situ monitoring of specific chemical and physical processes which occur at the surface. Auxillary measurements using XPS and photoluminescence are used to correlate film structure and chemistry with electronic properties.

这项工作的目标是了解和控制化学品 用于钝化GaAs的特殊类型处理的性质 用于改进电子器件性能、均匀性 和可靠性 GaAs硫化的化学性质， 依赖于特定的工艺参数， 正在研究对热、光和环境气体的响应。 红外光谱用于真实的实时原位监测 发生在地球上的特定化学和物理过程 面 利用XPS和光致发光的光谱测量 用于将薄膜结构和化学性质与 电子特性