Gallium Arsenide Sulfidation

点击翻译按钮获取中文摘要

The goal of this work is to understand and control the chemical nature of particular types of processing used to passivate GaAs surfaces for improved electronic device performance, uniformity and reliability. The chemical nature of sulfidation of GaAs, its dependence on particular processing parameters, and long term response to heat, light, and ambient gases are being studied. Infrared spectroscopy is used for real time in situ monitoring of specific chemical and physical processes which occur at the surface. Auxillary measurements using XPS and photoluminescence are used to correlate film structure and chemistry with electronic properties.