A Simple High-Performance Avalanche Photodiode for Long- Wavelength Optical Communications

该提案旨在继续第一阶段非常成功的工作，优化独特的砷化铟镓（InGaAs）结构，用于新型简化雪崩光电二极管（APD，适用于1000-1700 nm光谱区域）。第一阶段的工作表明，该结构可以使击穿电压增加一倍，减少边缘击穿，在击穿电压的一半下产生3 nA的雪崩增益和1 nA的漏电流。采用气相外延（VPE）技术制备了可工作的InGaAs APD。开发了计算机技术来模拟这些器件的电场行为（与南加州大学的S.R. Forrest教授一起）。第二阶段的工作包括“浮动”护环结构的优化，可能会在第一阶段的设备中加入一个新的“平板”结构。VPE将得到改进，以产生更低的背景和更精细的n掺杂控制。我们将提供10个易于制造的器件，其增益超过10，工作在2 GHz，灵敏度低于-40 dbm。

This proposal is to continue the highly successful Phase I work for optimization of the unique indium gallium arsenide (InGaAs) structure for a novel, simplified avalanche photodiodes (APD for the 1000-1700 nm spectral region). The Phase I work showed that the structure could be used to double the breakdown voltage, reduce edge breakdown, produce avalanche gains of 3 and leakage currents of 1 nA at half the break down voltage. Working InGaAs APD's were actually fabricated with vapor phase epitaxy (VPE). Computer techniques were developed to model the electric field behavior of these devices (with Prof. S.R. Forrest of the USC). Phase II work includes optimization of the "floating" guard-ring structure, possibly incorporating a new "slab" structure into the original Phase I device. VPE will be refined to yield lower background and finer control of n-doping. We will deliver ten devices which are easy to fabricate, have gains beyond 10, operate at 2 GHz and have sensitivities below -40 dbm.