Ft. Monmouth Interaction: Magneto-reflectivity Study of GaAs/AlAs Quantum Wells

PI将使用反射率和磁反射率光谱来研究由美国陆军电子设备和技术实验室(EDTL)与Mitra duta博士合作生长的GaAs/AlAs量子阱。一名研究生将参与EDTL的样品生长过程，以及那里的一些表征实验。这项工作的目的是确定GaAsAlAs量子阱的一些参数。具体来说，我们打算测量：(A)限制和应变对能带结构的影响，(B)势垒内的电子有效质量，以及(C)激子结合能。这些参数对于包含这些异质结构的电子器件的设计和建模至关重要。由于EDTL没有可用的磁光装置，我们希望这个联合项目将有助于那里的晶体生长和表征工作。

The PI will use reflectivity and magneto-reflectivity spectroscopies for the study of GaAs/AlAs quantum wells, grown at the U.S. Army Electronic Devices and Technology Laboratory (EDTL), in collaboration with Dr. Mitra Dutta. A graduate student will participate in the sample growth process, at EDTL, as well as in some of the characterization experiments there. The objective of the proposed work is to determine a number of parameters of GaAs/AlAs quantum wells. Specifically we intend to measure: (a) the effect of confinement and strain on the band structure, (b) the electron effective mass inside the wells, and (c) exciton binding energies. These parameters are crucial for the design and modeling of electronic devices that incorporate these heterostructures. Since no magneto- optical set-up is available at EDTL, we hope that this joint project will help the crystal growth and characterization effort there.