Fort Monmouth: Optical Studies of Novel N-typed Modulation Doped GaAs/A1As and A1As/A1GaAs Quantum Well Structures

9311835 Petrou我们提出了对以下两种半导体微结构的磁光研究：(A)在AlAs势垒中掺杂n型的GaAsAlAs量子阱。我们计划研究其最低导电子带位于硅施主下方几meV处的结构。(B)在AlGaAs层中掺杂n型的AlAs/AlGaAs量子阱。我们建议研究限制在AlAs层中的二维电子气的性质。***

9311835 Petrou We propose a magneto-optical study of the following two semiconductor microstructures: (a) GaAs/ALAs quantum wells dopes n-type in the A1As barriers. We plan to investigate structures for which th lowest conduction subband lies a few meV below the Silicon donors. (b) ALAs/ALGaAs quantum wells doped n-type in the ALGaAs layers. We propose to investigate the properties of the two-dimensional electron gas confined in the ALAs layers. ***