Engineering Research Equipment Grant: Network Analyzer for Laser Probe Measurement System (Supplement for Women, Minority and Handicapped Engineering Research Assistant)

这项工程研究设备赠款将支持实验 研究主要集中在声电荷的发展 传输（ACT）设备，一种相对较新的技术。 很简单， ACT装置是由霍斯金斯在伊利诺伊大学发明的 和Hunsinger在1982年提出的，本质上是电荷耦合器件（CCD） 为此，电荷包由电势传输， 以表面声波（SAW）而不是电势传播 由施加到表面电极的时钟脉冲施加。 ACT器械 电荷转移效率为0.99994，带宽为200 MHz 这远远超出了我们所取得的成就 CCD技术。 ACT是一种有前途和可行的技术， 迄今已被用来制作卷积器、乘法器、滤波器， 模拟存储器 其他可能的设备包括A/D转换器， 阵列处理器、可编程滤波器和成像器。 因为 声波传输电荷，抽头重量过滤器的精度 和其他ACT信号处理设备取决于 设备设计者描述声束轮廓。 因此，在本发明中， 声学在这方面的出现和发展中起着至关重要的作用。 技术. 本提案中要求的网络分析仪是 激光探针测量系统将用于研究细节 声表面波在压电半导体中的传播和产生， 压电半导体的异质结构 ACT设备的性能。

This Engineering Research Equipment Grant will support experimental research focused primarily on the development of Acoustic Charge Transport (ACT) devices, a relatively new technology. Very briefly, the ACT device was invented at the University of Illinois by Hoskins and Hunsinger in 1982 and is essentially a Charge-Coupled Device (CCD) for which the charge packets are transported by the potential which propagates with a surface acoustic wave (SAW) instead of the potential imposed by clock pulses applied to surface electrodes. ACT devices with charge transfer efficiencies of 0.99994 and bandwidths of 200 MHz have been fabricated and this is well beyond what has been achieved with CCD technology. ACT is a promising and viable technology which has thus far been used to make convolvers, correlators, filters, and analog memories. Other potential devices included A/D converters, array processors, programmable filters and imagers. Because the acoustic wave transports the charge, tap weight accuracies for filters and other ACT signal processing devices depend on the ability of the device designer to describe the acoustic beam profile. As such, acoustics play a crucial role in the emergence and development of this technology. The network analyzer requested in this proposal is part of a laser probe measurement system to be used in studying the details of SAW propagation and generation in piezoelectric semiconductors and heterostructures of piezoelectric semiconductors as they pertain to the performance of ACT devices.