Kinetics of Growth of Ceramic Thin Films During Solid-State Formation and Oxidation Reactions in Oxides and Silicates

本研究是多元氧化物和硅酸盐固相氧化和固相生成反应研究的继续。固态氧化研究强调位错缺陷在氧化动力学和原子机制中的作用。氧化动力学将作为位错密度、氧化学活性、温度和时间的函数来测量。氧化区的结构和生长将用光学和电子显微镜以及卢瑟福背散射光谱来确定。氧化过程将被模型化。固相形成反应的研究将集中在新晶体相生长的早期阶段，在该阶段，动力学是界面主导的，而不是扩散主导的。将研究界面附近的化学反应。

The research is a continuation of research on the solid- state oxidation and solid-state formation reactions of multicomponent oxides and silicates. The solid-state oxidation research emphasizes the role of dislocation defects in the kinetics and atomic mechanisms of oxidation. Oxidation kinetics will be measured as a function of density of dislocations, oxygen chemical activity, temperature and time. The structure and growth of the oxidized region will be determined using optical and electron microscopy, and Rutherford backscattering spectroscopy. The oxidation process will modelled. The research on solid-state formation reactions will concentrate on the early stages of growth of the new crystal phases where the kinetics are interface-dominated rather than diffusion-dominated. The chemical reactions near the interface will be studied.