Precipitation and Defect Formation Processes in Oxygen Implanted Silicon-on-Insulator Material

本研究的目的是了解高剂量氧注入硅合成绝缘体上硅材料的工艺参数与结构变化机理之间的关系。该研究使用透射电子显微镜技术来研究埋在氧化层之上的薄“表面”硅层结构的发展。试样使用各种植入和热处理来处理，以允许微观结构变化的形成。对沉淀和沉淀诱导缺陷形成的热激活过程的建模是基于对离子注入、高氧浓度和高缺陷密度的损伤效应进行修正的体硅模型。该研究有助于了解氧对硅的影响、辐射损伤以及离子注入硅的机制。

The purpose of the research is to understand the relationships between processing parameters and mechanisms of structural change in silicon-on-insulator material synthesized by high-dose oxygen implantation into silicon. The research uses transmission electron microscopy techniques to study the development of structure in thin "superficial" silicon layers above the buried oxide layer. Specimens are processed using a variety of implantation and thermal treatments to allow following of the formation of the microstructural changes. Modelling for thermally activated processes of precipitation and precipitate- induced defect formation is based on bulk silicon models modified for effects of damage from ion implantation, high oxygen concentration, and high defect density. The research is relevant to understanding of the effects of oxygen, radiation damage, and mechanisms of ion implantation in silicon.