Output Intensity Limit of Semiconductor Lasers

限制半导体激光器输出光强的现象是激光镜面非辐射复合引起的热失控现象。这项拟议工作的一个主要目标是开发一种技术，用于去除复合中心，然后用薄的钝化层稳定表面，使中心不会再生。如果表面可以没有非辐射复合中心，则最大输出强度可能增加三个数量级。另一个目标是根据活动层的几何形状和其他层和散热片的物理性质，得到无热失控的稳定性判据。该准则可用于最大输出功率的优化。实现这两个目标可导致最大产出强度大幅增加，并可消除由于刻面侵蚀造成的逐渐退化。

The phenomenon which limits the output intensity of semiconductor lasers is thermal runaway caused by nonradiative recombination at the laser mirror facet. One major objective of the proposed work is to develop a technique for removing the recombination centers and then stabilizing the surface with a thin passivating layer so that the centers are not regenerated. Possibly up to three orders of magnitude increase the maximum output intensity would be achieved if the surface could be made free of the nonradiative recombination centers. The other objective is to obtain a stability criterion for no thermal runaway in terms of active layer geometry and physical properties of other layers and heat sink. The criterion can be used to optimize for maximum output power. Achieving the two objectives could lead to a substantial increase in the maximum output intensity and could eliminate gradual degradation due to facet erosion.