Magneto-Reflectance Study of Short Peroid GaAs/A1As Superlattices and Related Microstructures - (Ft. Monmouth Interaction)

PI建议研究短周期GaAs/A1 As量子阱， 第二，从I型向II型过渡。 两个相关结构 将被审查。 (i)GaAs/A1 GaAs量子威尔斯阱， 传导子带分离在红外线中被调谐， 在阱的中心处生长的窄势垒的存在。 （二） 浅GaAs/A1 GaAs量子阱结构在其中的应用 外部磁场的作用会调整外部的电子状态 GaAs层。 拟议的研究将在 Mitra Dutta博士（ETDL） 这些样本将在 使用分子束外延技术在美国陆军ETDL设施中进行。 的硕士毕业生 SUNY将前往ETDL并参与TEM表征 的结构。

The PI proposed to examine short period GaAs/A1As quantum well, with emphasis in the type I to type II transition. Two related structures will be examined. (i) GaAs/A1GaAs quantum wells in which the conduction subband separation is tuned in the infrared, by the presence of a narrow barrier grown at the center of the well. (ii) Shallow GaAs/A1GaAs quantum well structures in which the application of an external magnetic field will tune the electronic states outside the GaAs layers. The proposed research will be carried out in collaboration with Dr. Mitra Dutta (ETDL). The samples will be grown at the U.S. Army ETDL facility using MBE. A graduate student from SUNY will travel to ETDL and participate in the TEM characterization of the structures.