Center for the Synthesis, Growth, and Analysis of Electronic Materials

该奖项将支持德克萨斯大学奥斯汀分校的电子材料合成、生长和分析科学技术中心。该中心的研究计划分为两个主要领域--化合物半导体和硅基材料。在每个推力区内，化学家将合成分子前体并确定它们的表面和气相反应性，工程师和物理学家将生长和分析由这些前体制成的电子材料薄膜，并建造和测试由这些薄膜制成的新设备。这项研究的一个主要组成部分将是合成、纯化和表面反应性测量的新型前体，在单个分子中包含III族和V族元素，具有低毒性，适合于利用先进的OMCVD和CBE技术生长薄膜。电子材料及其衍生的结构和设备是众多具有战略和经济意义的先进技术的核心。通过一个综合和协作的研究计划，该中心将把大学的科学家和工程师与桑迪亚国家实验室、德克萨斯仪器公司和摩托罗拉公司的科学家和工程师联系起来，开发和展示电子材料、结构和设备的新概念，这将导致更小的、具有定制的光学和电学属性的更快和更密集的集成电子设备。

This award will support the Science and Technology Center for the Synthesis, Growth and Analysis of Electronic Materials at the University of Texas, Austin. The research program of the Center is organized into two thrust areas--compound semiconductors and silicon-based materials. Within each thrust area chemists will synthesize molecular precursors and determine their surface and gas phase reactivities, and engineers and physicists will grow and analyze thin films of electronic materials made from these precursors, and construct and test new devices made from these films. A major component of the research will be the synthesis, purification and surface reactivity measurements of novel precursors, containing group III and group V elements in a single molecule, that have low toxicity and are suitable for film growth by advanced OMCVD and CBE techniques. Electronic materials, and the structures and devices derived from them, lie at the heart of numerous advanced technologies that have strategic and economic relevance. Through an integrated and collaborative research program, which links scientists and engineers at the University with scientists and engineers at Sandia National Laboratory, Texas Instruments Inc., and Motorola Inc., the Center will develop and demonstrate new concepts for electronic materials, structures and devices, which will lead to smaller, faster and more densely integrated electronic devices with tailored optical and electronic properties.