A New Copper-Indium-Selenium Based Photovoltaic Cell with Electronically Formed Window

利用CuInSe2最佳光伏性能的努力主要集中在p- CuInSe2 /n-CdS电池上，这主要是由于缺乏合适的n-CuInSe2窗口材料。我们提出了一种具有p-CuIn2Se3I/CuISe3窗口的新型n- cuin2se2基太阳能电池。新窗口将在I-I2- CuI-HI溶液中电化学生长在n-CuInSe2上，与合适的导体欧姆接触并制成固态太阳能电池。该电池将进行电光表征，并优化工艺参数以产生最大的功率输出。除了从电化学方法到异质结形成的加工和成本优势之外，预计所提出的电池比目前的p-CuInSe2/n-CdS电池还有其他一些好处。改善ITO/玻璃基板的粘附性，优化CuInSe2和CuIn2Se3I过渡层之间的晶格匹配，n型吸收器中电子的高迁移率，由于结两侧的相似成分（除了I）而具有更高的稳定性，这些都将导致更高效和稳定的太阳能电池。

Efforts at utilizing the optimum photovoltaic properties of CuInSe2 have been focussed on the p- CuInSe2 /n-CdS cell primarily due to lack of an appropriate window material for the n-CuInSe2. We propose to fabricate a new n-CuInSe2 based solar cell with a p-CuIn2Se3I/CuISe3 window. The new window will be electrochemically grown on n-CuInSe2 in I-I2- CuI-HI solution, ohmic contacted with a suitable conductor and fabricated into a solid state solar cell. The cell will be electro-optically characterized and process parameters optimized to yield maximum power output. In addition to processing and cost advantages expected from an electrochemical approach to heterojunction formation several other benefits are anticipated for the proposed cell over the present p-CuInSe2/n-CdS cell. Improved adhesion to ITO/glass substrate, optimum lattice match between CuInSe2 and the CuIn2Se3I transition layer, higher mobility of electrons in n-type absorber, greater stability due to similar components (except I) on both sides of the junction should lead to a more efficient and stable solar cell.