NSF Fort Monmouth Cooperative Program: Picosecond Photo- conductors on MBE Grown Materials for High Speed/High Fre- quency Microelectronics.

我们提议在蒙茅斯堡的陆军电子技术与设备实验室（ETDL）和马里兰大学之间开展一项合作研究项目。重点研究了将皮秒光导体直接集成到基于MBE的微电子芯片上的研究进展。本项目的具体研究任务包括：(1)开发基于MBE材料的皮秒光导体，用于片上波形的产生和测量，并与直接在半绝缘GaAs上制备的皮秒光导体进行性能比较基板。(2)利用皮秒光学表征技术研究MBE材料的电子特性、载流子动力学以及金属化的影响，如金属带的厚度；论皮秒电脉冲的产生与传播。(3)基于低温MBE生长GaAs的ps光导体的表征。(4)对共面微带传输线进行S参数测量，研究毫米波传播特性。

We propose a collaborative research project between the Army Electronics Technology and Devices Laboratory (ETDL) at Fort Monmouth and the University of Maryland. It focuses on the development of integrating picosecond photoconductors directly onto the MBE based microelectronic chip. The specific research tasks under this program include: (1) Developing MBE material based picosecond photoconductors for on chip waveform generation and measurement and comparing their performance with those fabricated directly on semi-insulating GaAs substrates. (2) Using picosecond optical characterization to study MBE material electronic properties, carrier dynamics, and the effect of metallization, such as the thickness of the metal strip, on the picosecond electric pulse generation and propagation. (3) Characterizing the ps photoconductors based on low temperature MBE grown GaAs. (4) Making S parameter measurements on the coplanar microstrip transmission line to study the millimeter-wave propagation characteristics.