A New n-CuInSe Based Photovoltaic Cell With an Electrochemically Formed p-(CuIn2S3I)-CuISe3 Window
A New n-CuInSe Based Photovoltaic Cell With an Electrochemically Formed p-(CuIn2S3I)-CuISe3 Window
批准号:
9023467
负责人:
Shalini Menezes
金额:
$22.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-08-15 至 1994-01-31
中文摘要
CuInSe2已被定位为主要的光伏材料,但由于缺乏合适的p型窗口材料,利用其最佳性能的努力尚未扩展到n-CuInSe2。在第一阶段,我们利用电化学表面转化为p-(CuIn2Se3I)- cuise3形成n/p异质结的新概念,建立了制造新型n- cuinse2基薄膜太阳能电池的可行性。电池性能主要取决于n-CuInSe2薄膜的质量,而窗层生长参数在较小程度上决定了电池性能。窗口层的组成和形态可以用电解质组成来控制。第二阶段的工作旨在深入研究n- cuinse2和窗口层的性质,表面转换机制和n/p结的光电性质。这些研究对细胞成分的开发和优化、处理和操作至关重要。除了这种简单的电化学方法所固有的加工、成本和环境优势外,预计标题电池比目前的p-CuInSe2/n-CdS电池还有其他一些优势。CuInSe2和CuIn2Se3I过渡层之间的最佳晶格匹配,低界面态密度,n型吸收器中更高的电子迁移率,对ITO/Glass衬底的附着力改善,由于结两侧相似的成分(除了I)而具有更高的稳定性,这些都将导致更高效和稳定的太阳能电池。
英文摘要
CuInSe2 has been targeted as the major photovoltaic material, but the efforts at utilizing its optimum properties have not been extended to n-CuInSe2 due to lack of an appropriate p-type window material. In Phase I, we established the feasibility of fabricating a new n-CuInSe2-based thin film solar cell by using a novel concept of electrochemical surface conversion to p-(CuIn2Se3I)-CuISe3 to form of a n/p heterojunction. The cell performance was primarily determined by the quality of the n-CuInSe2 films and to a lesser extent by the window layer growth parameters. The window layer composition and morphology can be controlled with electrolyte composition. The Phase II effort is aimed at in- depth investigation of the properties n-CuInSe2 and the window layer, the surface conversion mechanism and the opto-electronic properties of the n/p junction. These studies are essential for the development and optimization of the cell components, processing and operation. In addition to processing, cost and environmental advantages, inherent in this simple electrochemical approach to heterojunction formation, several other benefits are anticipated for the title cell over the present p-CuInSe2/n-CdS cell. Optimum lattice match between CuInSe2 and CuIn2Se3I transition layer, low interface state density, higher electron mobility in n-type absorber, improved adhesion to ITO/Glass substrate, greater stability due to similar components (except I) on both sides of the junction should lead to a more efficient and stable solar cell.
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