Surface Chemistry of Germanium Organometallics

有机金属气相外延将用于在硅衬底上生成锗薄膜，从而导致硅-锗合金和异质结构的形成。这些薄膜将被生产成超薄(1-10原子层)结构，作为设计所需界面的电子性质的一种手段。将使用SIMS、UPS和XPS表面科学技术来研究薄膜与硅衬底的相互作用。这些研究旨在从机理上理解外延锗膜沉积过程中涉及的表面过程。%在分析和表面化学的一般领域，这项研究的重点是在硅上形成超薄的锗薄膜，从而形成硅-锗合金。这些研究结果有望提高我们对这些在集成光电子器件、晶体管和薄膜电容器方面具有相当大潜力的合金的总体理解。

Organometallic vapor phase epitaxy will be used to generate germanium films on a silicon substrate leading to silicon-germanium alloy and heterostructure formation. The films will be produced as ultra-thin (1-10 atomic layer) structures as a means to engineering the electronic properties of the desired interfaces. Interactions of the films with the silicon substrate will be investigated using SIMS, UPS and XPS surface science techniques. These studies are aimed at a mechanistic understanding of the surface processes involved in the deposition of epitaxial germanium films. %%% The research, in the general area of Analytical and Surface Chemistry, focuses on the formation of ultra-thin germanium films on silicon, leading to silicon-germanium alloys. The results of the research promise to improve our general understanding of these alloys which have considerable potential in integrated optoelectonic devices, transistors and thin film capacitors.