Chemical Vapor Disposition Under Kinetic Control: A Contribution to the Development of New Precursors and the Elucidation of Film Growth Mechanisms

这个合作奖，根据材料化学 和化学加工倡议得到了 化学、材料研究和化学与 热系统。将制备新的前体， 参与化学气相沉积， 高性能半导体和陶瓷材料 动力学控制化学气相沉积中间体 气相外延将确定和它们的反应性 将与薄膜生长相关。薄膜生长机理 也将被研究。将采用一种新颖的反应堆系统 允许新的方法来识别，空间 和时间监测的物种形成时，热 气体前体分子在固体表面的分解。 %%% 由用于制造有机硅的前体形成的反应性中间体 已建立的气相沉积和气相外延工艺 大部分都是未知的。识别它们并监测它们的 反应速率将有助于更有效的过程 控制，也延伸到沉积全新的 材料.

This collaborative award, made under the Materials Chemistry and Chemical Processing Initiative is supported by the Divisions of Chemistry, Materials Research, and Chemical and Thermal Systems. New precursors will be prepared that will participate in the chemical vapor deposition of high-performance semiconductors and ceramic materials under kinetic control. Intermediates in chemical vapor deposition and vapor phase epitaxy will be identified and their reactivity will be correlated with film growth. Mechanisms of film growth will also be studied. A novel reactor system will be employed permitting new approaches to the identification, and spatial and temporal monitoring of species formed upon thermal decomposition of gaseous precursor molecules at solid surfaces. %%% Reactive intermediates formed from precursors used in established vapor deposition and vapor-phase epitaxy processes are largely unknown. Identifying them and monitoring their reaction rates will contribute to more effective process control and also extend to the deposition of entirely new materials.