Real Time Studies of the Evolution of Structural, Optical, and Electronic Properties in Thin Films

这项研究采用了一种新的基于椭偏测量的镜面反射薄膜和表面的时间分辨光谱。快速演变的薄膜和表面可以用亚单分子层的灵敏度和分辨率来实时表征。这项技术不同于其他方法，因为它的速度，它不需要真空仪器，它在沉积过程中被动操作，即使在最不利的环境，如化学气相沉积，它也可以探测表面。这项技术正被应用于第四类半导体的一些生长工艺。%该项目继续开发和应用一种测量原子层沉积的技术。这项技术是独一无二的，因为它逐层测量生长原子层。此外，它非常快速和坚固，可用于监测商业使用的腔体中半导体层的生长。这项技术是基于正在生长的表面对光线的反射。这项技术正在应用于许多材料，主要是半导体。

This research employs on a novel time-resolved spectroscopy for specular thin films and surfaces based on ellipsometry. Rapidly evolving thin films and surfaces can be characterized in real time with sub-monolayer sensitivity and resolution. The technique differs from alternative methods because of its speed, it requires no in vacuo instrumentation, it operates passively during deposition, and it can probe surfaces even in the most adverse environments such as chemical vapor deposition. The technique is being applied to a number of growth processes in group IV semiconductors. %%% This project continues the development and application of a technique to measure the deposition of atomic layers. The technique is unique in that it measures the growth atomic layer by atomic layer. In addition, it is very fast and robust and can be used to monitor growth of semiconductor layers in the chambers that are used commercially. The technique is based on reflection of light from the surface that is growing. The technique is being applied to a number of materials, primarily semiconductors.