U.S.-France Cooperative Research: Growth and Process Induced Defects of InP-Based Heterostructure Devices

这一为期三年的奖项支持密歇根大学的迪米特里斯·帕夫利迪斯、国家应用科学研究所(INSA)的弗雷德里克·杜克罗奎特和法国里昂Ecole Centrale的S.K.Krawczyk在微电子领域的美法合作研究。该项目的目标是研究高电子迁移率晶体管(HEMTs)的优化、工艺控制和可靠性。HEMT的基本异质结构将在密歇根大学进行生长、设计、制造和电学表征。这些样品将通过INSA和里昂的Ecole Centrale开发的各种材料表征技术进行进一步分析。研究人员将在最佳生长条件下对材料进行表征，分析热应力引起的工艺和缺陷。这位美国研究人员将HEMT和其他电子设备的性能优化以及新型HEMT的制造方面的专业知识带到了这次合作中。此外，还有法国在各种表征技术方面的专门知识，其中包括照片和电反射表征。材料分析的结果将有助于理解生长条件对材料性能的影响以及此类结构的可靠性。这些研究对开发新的半导体器件具有重要意义。

This three-year award supports U.S.-France cooperative research in microelectronics among Dimitris Pavlidis, University of Michigan, Frederique Ducroquet, National Institute for Applied Sciences (INSA), and S. K. Krawczyk of the Ecole Centrale in Lyon, France. The objective of the project is to study optimization, process control and reliability of high electron mobility transistors (HEMTs). The basic heterostructures for HEMTs will be grown, designed, fabricated and electrically characterized at the University of Michigan. These samples will be further analyzed by various material characterization techniques developed at INSA and the Ecole Centrale in Lyon. The investigators will characterize the material under optimum growth conditions, analyze the process and defects induced by thermal stress. The U.S. investigator brings to this collaboration expertise in performance optimization of HEMTS and other electronic devices and the fabrication of novel HEMTs. This is complemented by French expertise in various characterization techniques, which include photo and electro-reflectance characterization. The results from the material analysis will advance understanding of the effects of growth conditions on material properties and the reliability of such structures. Such studies are important to the development of new semiconductor devices.