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Integration of High-Temperature Superconductor Thin Films with GaAs Monolithic Microwave Integrated Circuits

Integration of High-Temperature Superconductor Thin Films with GaAs Monolithic Microwave Integrated Circuits
高温超导薄膜与砷化镓单片微波集成电路的集成
批准号:
9261038
负责人:
Qi Li
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-01-01 至 1993-09-30

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中文摘要
翻译
研究了利用脉冲激光原位沉积(PLD)、常规光刻图案化和金属化技术,在单片GaAs片上制作GaAsIC的YBCO基无源微波器件的可行性。为了获得高质量的超导薄膜,将对YBCO薄膜的超导性能进行评价,以选择最佳的缓冲膜材料和薄膜沉积工艺。将一个简单的超导带线滤波器与一个砷化镓低噪声放大器集成在一起,并对其性能进行了评估。在砷化镓衬底上制备高温超导薄膜的能力为许多超导薄膜技术开辟了一个非常丰富的机会领域。
英文摘要
The feasibility of fabricating a YBCO based passive microwave device with GaAs ICs on a single GaAs wafer by in-situ Pulsed Laser Deposition (PLD), conventional photolithographic patterning and metalization techniques will be developed. The superconducting properties of the YBCO films to select the best buffer film material and film deposition process will be evaluated in order to obtain high quality superconductor films. A simple superconductor stripline filter will be integrated with a GaAs low noise amplifier, and the device performance evaluated. The ability to fabricate HTSC films on GaAs substrates opens up a very rich field of opportunity for many superconducting film technologies.
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