Surface Microtopography, Atom Transport and Epitaxial Growth

9313371布莱克利将进行材料生长和加工的基础研究--表面扩散、台阶相互作用、外延，以了解和控制硅、锗和应变层合金薄膜晶体生长中的表面结构缺陷和表面形态和成分变化的动力学；扫描隧道显微镜将与电子能谱仪和X射线衍射相结合，用于全面表征表面形态以及研究生长过程中台阶重排的动力学。图案化衬底被开发并用作控制台阶分布的方法，其允许同时研究台阶密度的整个分布，而不必使用多个样品。具有阶跃密度分布的样品在防止和/或控制三维形核和生长方面也具有积极的实际意义。本课程的主要目标是对表面扩散、外延生长的基本特征以及相关的锗和硅工艺有一个基本的了解。该计划的一个重要特点是在材料科学和工程的基础和技术意义上对学生进行教育和培训。这项研究将有助于提高用于计算、信息处理和电信的先进器件和集成电路的综合性能。***

9313371 Blakely Basic studies of materials growth and processing-- surface diffusion, step interactions, epitaxy--will be conducted to understand and control surface structural defects and the kinetics of surface morphological and compositional changes in the crystal growth of silicon, germanium, and strained layer alloy thin films; STM in combination with electron(LEED) and X- Ray diffraction will be used to provide full characterization of surface morphology as well as to study the dynamics of step rearrangement during growth. Patterned substrates are developed and used as a way to control the distribution of steps which allows an entire distribution of step densities to be studied simultaneously instead of having to use multiple samples. Samples with a distribution of step densities also have positive practical implications with respect to preventing and/or controlling three-dimensional nucleation and growth. %%% The primary goal of this program is to develop a fundamental understanding of surface diffusion, and elementary features of epitaxial growth and related processing of germanium and silicon. An important feature of the program is the education and training of students in a fundamentally and technologically significant area of materials science and engineering. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***