Optically Detected Magnetic Resonance Studies of Ternary Chalcopyrite Semiconductors

利用光探测共振（ODMR）技术研究了两种三元黄铜矿（银镓硒和锌锗磷化物）中的点缺陷。这些半导体已被确定为近红外和中红外波长区域的频率转换应用的主要候选者。拟议的研究将有助于确定和表征点缺陷，负责不必要的光学吸收带在0.7至2.0微米的范围内，在这些材料。 非线性光学材料用于可调谐红外激光系统。 两种主要的候选材料，银镓硒和锌锗磷化物，由于产生光吸收带的缺陷而获得了有限的成功。允许原子尺度分辨率的光学光谱技术将被应用于表征缺陷。

Optically detected resonance (ODMR) will be applied to a study of point defects in two ternary chalcopyrites (silver gallium selenide and zinc germanium phosphide). These semiconductors have been identified as primary candidates for frequency-conversion applications in the near and mid-infrared wavelength regions. The proposed studies will help to identify and characterize the point defects responsible for unwanted optical absorption bands in the range from 0.7 to 2.0 microns in these materials. Nonlinear optical materials are used in tunable infrared laser systems. Two prime candidates, silver gallium selenide and zinc germanium phosphide, have met limited success due to defects which produce optical absorption bands. Optical spectroscopic techniques which allow atomic scale resolution will be applied to characterize the defects.