In-Situ Patterned Thermal Etch-Back for Fabrication of of Micro- and Nanostructures in Molecular Beam Epitaxy

[409925] Sadra P.I.提出了一种新的II-V型MBE的原位模式方法。私家侦探建议使用热蚀刻回，生长过程的反向，作为设计制造序列的额外自由度。此外，我们将在现场对这个蚀刻过程进行图案设计。虽然已经在真空中对MBE进行了几次尝试，但所使用的技术需要复杂和昂贵的多室系统，并且不能提供单室原位技术的完整过程简化。在这里，pi建议开发在一个腔室中以完全自动化的方式进行生长，图像化，蚀刻和过度生长的能力，并且不需要从其生长位置移除基板。根据所需的最小特征尺寸，pi将采用两种方法来生成模式。对于要求分辨率不小于几微米的应用，我们将使用激光扫描系统。为了制造量子线和量子点，我们将尝试使用自然的图案特性来生产图案蚀刻背掩模。这些技术都有各自的可能性和挑战，后者比前者更具探索性。* * *

9409925 Sadra The P.I. propose a new approach to in-situ patterning in II-V MBE. The P.I. propose to use thermal etch-back, the reverse of the growth process, as an additional degree of freedom in designing the fabrication sequence. Furthermore, we will pattern this etch-back process in-situ. Although several attempts at in-vacuu patterning in MBE have been made, 10-12 the techniques used require complex and expensive multiple-chamber systems and do not offer the full process simplification of a single-chamber in-situ technique. Here, the P.I. propose to develop the capability to perform growth, patterning, etching, and overgrowth, in one chamber, all in a fully automated manner and without removing the substrate from its growth position. The P.I. will employ two approaches to producing the pattern, depending on the desired minimum feature size. For applications requiring resolution no smaller than a few microns, we will use a laser scanning system. For fabrication of quantum wires and dots we will attempt to use natural patterning properties to produce a patterned etch-back mask. Each of these techniques offers its own possibilities and challenges, with the latter having a more exploratory nature than the former. ***