Acquisition of a Low-Energy Electron Microscope

一台低能电子显微镜(LEEM)将由学术研究基础设施计划提供资金。最先进的LEEM将从IBM获得，它是由R.TroMP在那里内部开发的。目前，全世界仅有少量的LEEM，还有大量的科学应用有待开发。该计划还将包括一些开发，将扫描隧道显微镜(STM)与LEEM相结合，并将一种使用导波光学光谱的新型光学探测器与LEEM相结合。该研究将涉及半导体薄膜的外延生长工艺和生长优化。要研究的材料体系包括硅、硅锗和第三族氮化物。将努力将超音速喷射沉积与LEEM相结合。使用一种相对较新的电子能谱，即低能电子显微镜，将对外延生长过程和生长优化进行研究。研究将集中在硅、硅锗和第三族氮化物上。将开始与IBM合作，为这项相对较新的电子显微镜技术开发新的能力。

A low-energy electron microscope (LEEM) will be acquired with funds from the Academic Research Infrastructure Program. The state-of-the-art LEEM will be obtained from IBM where it has been developed in-house by R. Tromp. Currently there are only a small number of LEEMs in the entire world and there are large numbers of scientific applications to be exploited. The program will also include some development by combining scanning tunneling microscopy (STM) with LEEM and also by combining a novel optical probe using guided-wave optical spectroscopy with LEEM. The research will involve epitaxial growth processes and growth optimization of semiconductor films. Materials systems to be studied include silicon, silicon-germanium and group III- nitrides. An effort will be made to combine supersonic jet deposition with LEEM. Using a relatively new electron spectroscopy, namely low-energy electron microscopy, studies will be made of the epitaxial growth process and growth optimization. The research will focus on silicon, silicon-germanium and group III-nitrides. Collaborative efforts with IBM will be initiated to develop new capabilities for this relatively new electron microscopy technique.