Materials Research Group on Studies of Fundamental Mechanisms of Film Growth Using Chemical Vapor Deposition

化学气相沉积薄膜生长基本机制研究材料研究组

• 批准号: 9121074
• 负责人: Max Lagally
• 金额: $ 279.6万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9121074&HistoricalAwards=false
• 关键词: Materials; Research; Group; Studies; Fundamental

This award is to establish a new Materials Research Group at the University of Wisconsin at Madison. The topic of the research of this group is studies the fundamental mechanisms in growth and the resulting microstructure of thin films of semiconducting materials using chemical vapor deposition. The emphases of the research include: understanding of the interaction of the gas phase with the growing thin film through studies of the precursor gases and the gas phase chemistry, quantitative microscopic characterization of the kinetic and thermodynamic mechanisms involved in growth, ex- situ characterization of the structural, optical, and electronic nature of the resulting films, theoretical analysis and computational modeling of the gas phase chemistry and film structure, feedback from characterization and theory to growth chemistry, design of novel processing and materials on the basis of new understanding of the growth process. The group is developing a chemical vapor deposition system capable of growing electronic device-quality films, that also allows in-situ monitoring of the growth process. The initial materials being studied are silicon and silicon-germanium systems/multilayers. The later stages of the research involves studies of group III nitrides, which are wide band-gap semiconductors that show great promise for application in integrated electronic, optical, and optoelectronic devices. Characterization techniques being used include: photoreflectance, photoluminescence, reflection difference spectroscopy, mass spectroscopy, reflection high energy electron diffraction, scanning tunnelling microscopy, and low energy electron diffraction. Theoretical techniques include Monte Carlo simulations, rate equation calculations, and statistical mechanical methods. The strengths of the group are the balance of the complementary expertise of the investigators and the facilities available for this research. This research would not be possible without the collaboration of the investigators working in an interactive and integrated mode.

该奖项旨在建立一个新的材料研究小组， 威斯康星州麦迪逊大学。 本课题的研究 这个小组研究生长的基本机制， 半导体材料薄膜的最终微结构 使用化学气相沉积。 研究重点 包括：了解气相与 生长薄膜通过研究的前体气体和 气相化学，定量微观表征，气相色谱，气相色谱 生长中的动力学和热力学机制，例如， 结构、光学和电子的原位表征 所得膜的性质，理论分析和 气相化学和膜的计算模拟 结构，从表征和理论到增长的反馈 化学，新工艺和材料的设计， 对成长过程的新认识。 本集团正发展 一种能够生长电子的化学气相沉积系统， 设备质量的电影，这也允许在现场监测的 成长过程 最初被研究的材料是硅 和硅-锗系统/多层。 的后期阶段 研究涉及III族氮化物的研究，这是广泛的 带隙半导体显示出巨大的应用前景， 集成电子、光学和光电器件。 使用的表征技术包括：光反射， 光致发光，反射差谱，质量 光谱学，反射高能电子衍射，扫描 隧道显微镜和低能电子衍射。 理论技术包括蒙特卡罗模拟，速率 方程计算和统计力学方法。 的 集团的优势是互补的平衡 调查人员的专门知识和可供使用的设施 这项研究。 这项研究是不可能的， 调查人员以互动和 集成模式