Plasma Immersion Ion Implantation for Subsurface Material Synthesis

9509800 Cheung该研究解决了等离子体浸没离子注入（1）掩埋电介质（氧化物）形成（SIMOX），（2）离子束混合与同时沉积和注入形成GeSi和GeSiC系统和（3）等离子体建模与等离子体横向非均匀性和离子束混合的2D效果。 这项研究强调了次表面材料的合成，其中注入不受热平衡的约束，并且可以进行大于固溶度的注入浓度。 除了隐埋的异质结之外，还存在实现隐埋的氮氧化物（SMON）和隐埋的半导体异质结（Si/SiC/Si）的技术的变化。 等离子体建模区域的目的是将等离子体参数与电子器件特性联系起来。 ***

9509800 Cheung The research addresses Plasma Immersion Ion Implantation for (1) buried dielectric (oxide) formation (SIMOX), (2) ion-beam mixing with simultaneous deposition and implantation to form GeSi and GeSiC systems and (3) plasma modeling with 2D effects of plasma lateral nonuniformity and ion-beaming mixing. This research emphasizes subsurface material synthesis where the implantation is not constrained by thermal equilibrium and implanted concentrations greater than solid-solubility can be performed. In addition to buried dielectrics there are variations on the technique to realize buried oxynitride (SMON) and buried semiconductor heterojunctions (Si/SiC/Si). The intent in the plasma modeling area is to relate plasma parameters to electronic device characteristics. ***