Plasma Immersion Ion Implantation for Surface Material Synthesis

在等离子体浸没离子注入（PII）中，离子直接从等离子体环境（目标所在的环境）中提取，并通过高压护套加速进入目标。利用电子回旋共振（ECR）源产生的高离子密度等离子体，等离子体与负偏置目标之间的空间电荷区可以维持高达200kV的电位差，离子注入通量高达10 16/ cm2 -sec。这个剂量率相当于每秒注入10个单层原子，比传统离子注入高100到1000倍。该技术的其他独特之处还包括：无离子质量选择，无光束输运光学，离子能量和角分布由等离子体气体压力和施加的偏置波形控制。通过在等离子体中添加一个溅射电极，该等离子体由一个单独的电压电源（即三极管配置）供电，该系统可用于溅射离子注入和离子辅助的物理/化学气相沉积。迄今为止在硅器件加工方面的工作表明，PIII非常适合高吞吐量、大面积表面加工，并与未来制造设备的集群工具概念兼容。本课题研究了由于PIII技术的高注入率而形成的亚稳冶金相，以及伴随进行高剂量率离子束混合和沉积的可能性。这将通过使用具有可变脉冲宽度、占空因数和电压水平的可编程脉冲来实现。我们的工作是探索PIII在合成和修饰新型电子和光学材料方面的科学和工程。PI还将研究使用PIII合成高带隙半导体，如GaN和AINm，修改选择性金属沉积的表面化学，形成具有成分梯度的新型薄介电薄膜，用埋藏的GeSi合金进行带隙剪裁。提高亚微米互连的机械应力和电迁移可靠性。

In plasma immersion ion implantation (PII), ions are extracted directly from a plasma environment (in which the target is located) and accelerated through a high voltage sheath into the target. With a high ion-density plasma produced by electron cyclotron resonance (ECR) sources, the space charge region between the plasma and a negatively biased target can sustain a potential difference up to 200kV, with an ion implantation flux as high as 10 16/cm1-sec. this dose rate is equivalent to 10 monolayers of implanted atoms per second, and is a factor of one hundred to a thousand higher than conventional ion implantation. Other unique features of this technique include: no ion mass selection, no beam transport optics, and ion energy and angular distributions controlled by the plasma gas pressure and the applied bias waveforms. By adding a sputtering electrode into the plasma which is powered by a separate voltage supply (i.e., a triode configuration), the system can be used for sputtered ion implantation and ion assisted physical/chemical vapor deposition. Work to date on silicon device processing indicates the PIII is well-suited for high throughput, large area surface processing and is compatible with the cluster tool concept for future manufacturing equipment. In the grant the exploration of the formation of metastable metallurgical phases due to the high implantation rate of the PIII technique and the possibility of performing high dose rate ion beam mixing and deposition concomitantly. this will be achieved by using programmable pulses with variable pulse width, duty factor and voltage levels. The proposed work is to explore the science and engineering of PIII for synthesis and modification of novel electronic and optical materials. The PI will also investigate using PIII to synthesize high bandgap semiconductors such as GaN and AINm, to modify surface chemistry for selective metal deposition, to form novel thin dielectric films with composition gradients, to perform bandgap tailoring with buried GeSi alloys, and to improve the mechanical stress and electromigration reliability of submicron interconnects.