Plasma Immersion Ion Implantation for Surface Material Synthesis

用于表面材料合成的等离子体浸没离子注入

• 批准号: 9202993
• 负责人: Nathan Cheung
• 金额: $ 50.1万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202993&HistoricalAwards=false
• 关键词: Plasma; Immersion; Ion; Implantation; Surface

In plasma immersion ion implantation (PII), ions are extracted directly from a plasma environment (in which the target is located) and accelerated through a high voltage sheath into the target. With a high ion-density plasma produced by electron cyclotron resonance (ECR) sources, the space charge region between the plasma and a negatively biased target can sustain a potential difference up to 200kV, with an ion implantation flux as high as 10 16/cm1-sec. this dose rate is equivalent to 10 monolayers of implanted atoms per second, and is a factor of one hundred to a thousand higher than conventional ion implantation. Other unique features of this technique include: no ion mass selection, no beam transport optics, and ion energy and angular distributions controlled by the plasma gas pressure and the applied bias waveforms. By adding a sputtering electrode into the plasma which is powered by a separate voltage supply (i.e., a triode configuration), the system can be used for sputtered ion implantation and ion assisted physical/chemical vapor deposition. Work to date on silicon device processing indicates the PIII is well-suited for high throughput, large area surface processing and is compatible with the cluster tool concept for future manufacturing equipment. In the grant the exploration of the formation of metastable metallurgical phases due to the high implantation rate of the PIII technique and the possibility of performing high dose rate ion beam mixing and deposition concomitantly. this will be achieved by using programmable pulses with variable pulse width, duty factor and voltage levels. The proposed work is to explore the science and engineering of PIII for synthesis and modification of novel electronic and optical materials. The PI will also investigate using PIII to synthesize high bandgap semiconductors such as GaN and AINm, to modify surface chemistry for selective metal deposition, to form novel thin dielectric films with composition gradients, to perform bandgap tailoring with buried GeSi alloys, and to improve the mechanical stress and electromigration reliability of submicron interconnects.

在等离子体浸没离子注入（PII）中，离子 直接从等离子体环境中提取 (in目标所处的位置）并加速 穿过高压护套进入目标 与 由电子产生的高离子密度等离子体 回旋共振（ECR）源，空间 等离子体和负电荷之间的电荷区域 有偏见的目标可以维持一个潜在的差异， 到200 kV，离子注入通量高达 10 16/cm 1-sec。 这个剂量率相当于10 单层注入原子每秒，是一个 高出一百到一千倍 常规离子注入。 造型独特的 该技术的特点包括：无离子质量 选择，无射束传输光学器件，和离子能量 以及等离子体控制的角分布 气体压力和所施加的偏压波形。 通过 在等离子体中加入溅射电极， 由单独的电压源供电（即，一 配置），该系统可用于 溅射离子注入和离子辅助 物理/化学气相沉积。 迄今工作 硅器件工艺表明PIII是 非常适合高通量、大面积表面 处理并与群集工具兼容 未来制造设备的概念。 在 该补助金的探索形成的 亚稳冶金相，由于高 PIII技术的植入率和 实现高剂量率离子束的可能性 混合和沉积。 这将是 通过使用可编程脉冲实现， 可变脉冲宽度、占空因数和电压电平。 拟议的工作是探索科学和 用于合成和修饰的PIII工程 新的电子和光学材料。 的PI 还将研究使用PIII合成高 带隙半导体如GaN和AlN m， 改变表面化学， 沉积，以形成新颖的薄介电膜， 成分梯度，以执行带隙调整 与埋GeSi合金，并提高 机械应力和电迁移可靠性 亚微米互连。