Internal Interfaces in Semiconductors

9522253卡特这个研究项目的目标是对微观细节，特别是异质结构界面上的化学键和缺陷以及化合物半导体晶格中的位错有新的了解。这项研究将重点研究反位点键，这被认为是位错核心和这些材料中几乎所有晶界的内在因素。观察到的缺陷结构和计算出的缺陷结构之间将通过计算机图像模拟进行关联。界面的电学性质将用高分辨率阴极发光和电子束感应电流技术进行研究。此外，还将通过控制变形实验来研究各个界面的力学行为。该项目将利用在界面和缺陷以受控方式引入的地方特别准备的样本，以便更好地了解缺陷，并了解如何使用新信息来利用缺陷行为或制定控制、避免或消除缺陷的策略。这个研究项目将应用最先进的材料科学分析和计算机模拟技术，以基本了解激光和电子设备中使用的化合物半导体材料的先进结构中关键界面的缺陷。这项研究将有助于加深对界面化学和物理性质以及限制半导体器件应用或寿命的其他缺陷的基本了解。该计划的一个重要特点是在一个具有根本意义和技术意义的领域培养研究生和本科生。***

9522253 Carter The goals of this research project are to gain new understanding of microscopic details, particularly chemical bonding and defects, at heterostructure interfaces and of dislocations in the lattice of compound semiconductors. The research will emphasize studies of anti-site bonding which is thought to be an intrinsic factor in the core of dislocations and of nearly all grain boundaries in these materials. Correlation between observed and calculated defect structures will be made through computer image simulation. The electrical properties of interfaces will be investigated by high-resolution cathodoluminescence and electron-beam induced current techniques. Additionally, the mechanical behavior of individual interfaces will be studied by controlled deformation experiments. The project will utilize samples specially prepared where interfaces and defects have been introduced in a controlled manner so that improved understanding of the defects can be obtained, and also understanding of the ways new information can be used to both exploit defect behavior or to develop strategies to control, avoid or eliminate the defects. %%% This research project will apply state-of-the-art materials science analysis and computer simulation techniques to obtain basic understanding of defects at critical interfaces in advanced structures of compound semiconductor materials used in lasers and electronic devices. This research will contribute to improve fundamental understanding of interface chemistry and physical properties as well as other defects which limit the applications or lifetime of semiconductor devices. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. ***