Dislocations in GaN

GaN 中的位错

• 批准号: 0102327
• 负责人: C Carter
• 金额: $ 36.05万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-06-01 至 2005-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0102327&HistoricalAwards=false
• 关键词: Dislocations; GaN

This project aims at greater understanding of dislocations in GaN. The approach involves generation of dislocations with known Burgers vectors and known character, and the study of how these dislocations propagate during thin film growth. Additionally, the project addresses how dislocation propagation is influenced by orientation of the growth surface, particularly during lateral epitaxial overgrowth (LEO). Electrical and optical properties of these dislocations will also be examined. Specially designed grain boundaries will consist of ordered arrays of dislocations which are self-aligning and self-stabilizing. Variation of misorientation angle will be used to give control over dislocation spacing and character of the dislocations while variation of the boundary plane will be used for Burger vector control. Having many aligned dislocations in a single specimen gives the benefit of meaningful statistical analysis. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. These studies will improve the fundamental understanding of defects in Gallium Nitride, which is a key material to advanced microelectronics and photonics. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and education outreach activities to promote diversity. ***

该项目旨在更好地了解GaN中的位错。该方法包括产生具有已知Burgers矢量和已知特征的位错，以及研究这些位错在薄膜生长过程中如何传播。此外，该项目还研究了位错传播如何受生长表面取向的影响，特别是在横向外延过度生长(LEO)过程中。我们还将研究这些位错的电学和光学性质。特殊设计的晶界将由有序的位错阵列组成，这些位错阵列是自对准和自稳定的。错向角的变化将用于控制位错间距和位错的性质，而边界面的变化将用于Burger矢量控制。在一个样品中有许多排列的位错可以带来有意义的统计分析的好处。%该项目解决了材料科学中具有高度技术相关性的主题领域的基础研究问题。这些研究将提高对氮化镓缺陷的基本认识，氮化镓是先进微电子和光子学的关键材料。该计划的一个重要特点是，通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来，并开展教育推广活动，以促进多样性。***