Novel Structural Studies of Adsorption and Heteroepitaxy on Semiconductors

9632593 Bedzyk本研究项目涉及半导体结构异质外延生长的关键方面，包括应变，表面活性剂（生长相关的吸附物，包括掺杂剂）的影响，并通过表面活性剂物种的表面动力学现象的改变。 该方法采用的X射线驻波（XSW）技术，利用先进的光源在国家设施沿着与更传统的表面科学技术在西北部的结构，吸附和转化动力学的生长相关的物种的表面上的生长，应变异质层。 进行的现场研究将集中在硅和锗基片上第IV-IV族元素的分子束外延上。 高分辨率XSW数据将提供应变覆盖层内的原子位置，精度为0.01埃，并将用作理论模型和模拟的严格测试。该研究将在先进的电子/光子器件和集成电路的几个方面的技术相关性的基础水平贡献基本材料科学知识。 此外，从该研究项目中获得的知识和理解预计将通过提供设计和生产改进材料和材料组合的基本理解和基础，以提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9632593 Bedzyk This research project addresses critical aspects of heteroepitaxial growth of semiconductor structures including effects of strain, surfactants(growth related adsorbates including dopants), and alteration of surface kinetic phenomena through surfactant species. The approach employs the x-ray standing wave(XSW) technique utilizing advanced light sources at national facilities along with more conventional surface science techniques at Northwestern to focus on the structure, adsorption, and transformation kinetics of growth-related species on the surface of a growing, strained heterolayer. In-situ studies undertaken will center on the molecular beam epitaxy of elements from groups IV-IV on silicon and germanium substrates. The high resolution XSW data will provide atomic positions within a strained overlayer with a precision of 0.01 Angstroms, and will be used as a stringent test of theoretical models and simulations. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***